Impact of Intrinsic Stress in Diamond Capping Layers on the...

IEEE Transactions on Electron Devices 2013 / 10 Vol. 60; Iss. 10

Impact of Intrinsic Stress in Diamond Capping Layers on the Electrical Behavior of AlGaN/GaN HEMTs

Wang, Ashu, Tadjer, Marko J., Anderson, Travis J., Baranyai, Roland, Pomeroy, James W., Feygelson, Tatyana I., Hobart, Karl D., Pate, Bradford B., Calle, Fernando, Kuball, Martin
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Volume:
60
Language:
english
Journal:
IEEE Transactions on Electron Devices
DOI:
10.1109/TED.2013.2275031
Date:
October, 2013
File:
PDF, 1.32 MB
english, 2013
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