Deep-Level Characterization in GaN HEMTs-Part I: Advantages...

IEEE Transactions on Electron Devices 2013 / 10 Vol. 60; Iss. 10

Deep-Level Characterization in GaN HEMTs-Part I: Advantages and Limitations of Drain Current Transient Measurements

Bisi, Davide, Meneghini, Matteo, de Santi, Carlo, Chini, Alessandro, Dammann, Michael, Bruckner, Peter, Mikulla, Michael, Meneghesso, Gaudenzio, Zanoni, Enrico
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Volume:
60
Language:
english
Journal:
IEEE Transactions on Electron Devices
DOI:
10.1109/TED.2013.2279021
Date:
October, 2013
File:
PDF, 2.31 MB
english, 2013
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