Deep Levels Characterization in GaN HEMTs—Part II:...

IEEE Transactions on Electron Devices 2013 / 10 Vol. 60; Iss. 10

Deep Levels Characterization in GaN HEMTs—Part II: Experimental and Numerical Evaluation of Self-Heating Effects on the Extraction of Traps Activation Energy

Chini, Alessandro, Soci, Fabio, Meneghini, Matteo, Meneghesso, Gaudenzio, Zanoni, Enrico
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Volume:
60
Language:
english
Journal:
IEEE Transactions on Electron Devices
DOI:
10.1109/TED.2013.2278290
Date:
October, 2013
File:
PDF, 2.26 MB
english, 2013
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