Electron Velocity Enhancement in Laterally Scaled GaN DH-HEMTs With $f_{T}$ of 260 GHz
Shinohara, K., Regan, D., Milosavljevic, I., Corrion, A. L., Brown, D. F., Willadsen, P. J., Butler, C., Schmitz, A., Kim, S., Lee, V., Ohoka, A., Asbeck, P. M., Micovic, M.Volume:
32
Language:
english
Journal:
IEEE Electron Device Letters
DOI:
10.1109/LED.2011.2158386
Date:
August, 2011
File:
PDF, 508 KB
english, 2011