Volume 32; Issue 8

IEEE Electron Device Letters

Volume 32; Issue 8

1

Impact of Graphene Interface Quality on Contact Resistance and RF Device Performance

Hsu, A., Han Wang, Ki Kang Kim, Jing Kong, Palacios, T.

Journal:

IEEE Electron Device Letters

Year:

2011

Language:

english

File:

PDF, 335 KB

english, 2011

2

Sine Waveguide for 0.22-THz Traveling-Wave Tube

Xiong Xu, Yanyu Wei, Fei Shen, Zhaoyun Duan, Yubin Gong, Hairong Yin, Wenxiang Wang

Journal:

IEEE Electron Device Letters

Year:

2011

Language:

english

File:

PDF, 368 KB

english, 2011

3

20.1% Efficient Silicon Solar Cell With Aluminum Back Surface Field

Fellmeth, Tobias, Mack, S., Bartsch, J., Erath, D., JÃ¤ger, U., Preu, R., Clement, F., Biro, D.

Journal:

IEEE Electron Device Letters

Year:

2011

Language:

english

File:

PDF, 305 KB

english, 2011

4

Proposal of a Spin Torque Majority Gate Logic

Nikonov, Dmitri E., Bourianoff, George I., Ghani, Tahir

Journal:

IEEE Electron Device Letters

Year:

2011

Language:

english

File:

PDF, 300 KB

english, 2011

5

Effects of Nanoscale Contacts to Graphene

Franklin, Aaron D., Han, Shu-Jen, Bol, Ageeth A., Haensch, Wilfried

Journal:

IEEE Electron Device Letters

Year:

2011

Language:

english

File:

PDF, 361 KB

english, 2011

6

Stable Encapsulated Organic TFT With a Spin-Coated Poly(4-Vinylphenol-Co-Methyl Methacrylate) Dielectric

Zan, Hsiao-Wen, Hsu, Ting-Yu

Journal:

IEEE Electron Device Letters

Year:

2011

Language:

english

File:

PDF, 450 KB

english, 2011

7

A Simple Series Resistance Extraction Methodology for Advanced CMOS Devices

Campbell, J. P., Cheung, K. P., Suehle, J. S., Oates, A.

Journal:

IEEE Electron Device Letters

Year:

2011

Language:

english

File:

PDF, 125 KB

english, 2011

8

All-Inkjet-Printed Organic Thin-Film Transistor Inverter on Flexible Plastic Substrate

Chung, Seungjun, Kim, Seul Ong, Kwon, Soon-Ki, Lee, Changhee, Hong, Yongtaek

Journal:

IEEE Electron Device Letters

Year:

2011

Language:

english

File:

PDF, 377 KB

english, 2011

9

Simultaneous Capacitive and Electrothermal Position Sensing in a Micromachined Nanopositioner

Zhu, Y., Moheimani, S. O. R., Yuce, M. R.

Journal:

IEEE Electron Device Letters

Year:

2011

Language:

english

File:

PDF, 330 KB

english, 2011

10

Nanometric AlGaN/GaN HEMT Performance with Implant or Mesa Isolation

Sun, Haifeng, Alt, Andreas R., Tirelli, Stefano, Marti, Diego, Benedickter, Hansruedi, Piner, Edwin, Bolognesi, C. R.

Journal:

IEEE Electron Device Letters

Year:

2011

Language:

english

File:

PDF, 494 KB

english, 2011

11

Identifying Interface States in AlInN/GaN Heterostructure by Photocurrent Method

Huang, Y., Chen, D. J., Lu, H., Zhang, R., Zheng, Y. D., Li, L., Dong, X., Li, Z. H., Chen, C., Chen, T. S.

Journal:

IEEE Electron Device Letters

Year:

2011

Language:

english

File:

PDF, 344 KB

english, 2011

12

A Depletion-Mode a-IGZO TFT Shift Register With a Single Low-Voltage-Level Power Signal

Kim, Binn, Choi, Seung Chan, Lee, Soo-Yeon, Kuk, Seung-Hee, Jang, Yong Ho, Kim, Chang-Dong, Han, Min-Koo

Journal:

IEEE Electron Device Letters

Year:

2011

Language:

english

File:

PDF, 427 KB

english, 2011

13

Electron Velocity Enhancement in Laterally Scaled GaN DH-HEMTs With $f_{T}$ of 260 GHz

Shinohara, K., Regan, D., Milosavljevic, I., Corrion, A. L., Brown, D. F., Willadsen, P. J., Butler, C., Schmitz, A., Kim, S., Lee, V., Ohoka, A., Asbeck, P. M., Micovic, M.

Journal:

IEEE Electron Device Letters

Year:

2011

Language:

english

File:

PDF, 508 KB

english, 2011

14

Three-Dimensional Stacked Multilayer Graphene Interconnects

Yu, Tianhua, Liang, Chen-Wei, Kim, Changdong, Song, Eui-Sang, Yu, Bin

Journal:

IEEE Electron Device Letters

Year:

2011

Language:

english

File:

PDF, 214 KB

english, 2011

15

Efficiency and Droop Improvement in GaN-Based High-Voltage Light-Emitting Diodes

C. H. Wang, D. W. Lin, C. Y. Lee, M. A. Tsai, G. L. Chen, H. T. Kuo, W. H. Hsu, H. C. Kuo, T. C. Lu, S. C. Wang, G. C. Chi

Journal:

IEEE Electron Device Letters

Year:

2011

Language:

english

File:

PDF, 328 KB

english, 2011

16

Performance of Localized-SOI MOS Devices on (110) Substrates: Impact of Channel Direction

J. Huguenin, S. Monfray, J. Hartmann, V. Destefanis, V. Delaye, M. Samson, P. Boulitreau, Y. Morand, P. Brianceau, C. Arvet, P. Gautier, T. Skotnicki, G. Ghibaudo, F. Boeuf

Journal:

IEEE Electron Device Letters

Year:

2011

Language:

english

File:

PDF, 453 KB

english, 2011

17

Suppression of Interface State Generation in Si MOSFETs with Biaxial Tensile Strain

Y. Zhao, M. Takenaka, S. Takagi

Journal:

IEEE Electron Device Letters

Year:

2011

Language:

english

File:

PDF, 357 KB

english, 2011

18

On-Current Decrease After Erasing Operation in the Nonvolatile Memory Device With LDD Structure

G. Chang, T. Chang, Y. Syu, Y. Tai, F. Jian

Journal:

IEEE Electron Device Letters

Year:

2011

Language:

english

File:

PDF, 277 KB

english, 2011

19

A Full-Swing a-IGZO TFT-Based Inverter With a Top-Gate-Bias-Induced Depletion Load

M. J. Seok, M. H. Choi, M. Mativenga, D. Geng, D. Y. Kim, J. Jang

Journal:

IEEE Electron Device Letters

Year:

2011

Language:

english

File:

PDF, 587 KB

english, 2011

20

GaN/InGaN Heterojunction Bipolar Transistors With $f_{T} > \hbox{5}\ \hbox{GHz}$

S. Shen, R. D. Dupuis, Y. Lee, H. Kim, Y. Zhang, Z. Lochner, P. D. Yoder, J. Ryou

Journal:

IEEE Electron Device Letters

Year:

2011

Language:

english

File:

PDF, 211 KB

english, 2011

21

$ hbox{Al}_{2}hbox{O}_{3}$ Gate Insulators]]>

Corrion, A. L., Shinohara, K., Regan, D., Milosavljevic, I., Hashimoto, P., Willadsen, P. J., Schmitz, A., Kim, S. J., Butler, C. M., Brown, D.

Journal:

IEEE Electron Device Letters

Year:

2011

Language:

english

File:

PDF, 398 KB

english, 2011

22

High-Performance Metal–Insulator-Metal Capacitor Using Stacked $\hbox{TiO}_{2}/\hbox{Y}_{2}\hbox{O}_{3}$ as Insulator

Wu, Yung-Hsien, Lin, Chia-Chun, Hu, Yao-Chung, Wu, Min-Lin, Wu, Jia-Rong, Chen, Lun-Lun

Journal:

IEEE Electron Device Letters

Year:

2011

Language:

english

File:

PDF, 417 KB

english, 2011

23

Bidirectional Two-Terminal Switching Device for Crossbar Array Architecture

Song, Yun Heub, Park, Seung Young, Lee, Jung Min, Yang, Hyung Jun, Kil, Gyu Hyun

Journal:

IEEE Electron Device Letters

Year:

2011

Language:

english

File:

PDF, 411 KB

english, 2011

24

Low-Temperature Hybrid CMOS Circuits Based on Chalcogenides and Organic TFTs

Mejia, Israel, Salas-Villasenor, Ana L., Avendano-Bolivar, Adrian, Horvath, Julius, Stiegler, Harvey, Gnade, Bruce E., Quevedo-Lopez, Manuel A.

Journal:

IEEE Electron Device Letters

Year:

2011

Language:

english

File:

PDF, 280 KB

english, 2011

25

The Effect of Active-Layer Thickness and Back-Channel Conductivity on the Subthreshold Transfer Characteristics of Hf–In–Zn–O TFTs

Maeng, W. J., Park, Joon Seok, Kim, Hyun-Suk, Kim, Eok Soo, Son, Kyoung Seok, Kim, Tae Sang, Ryu, Myungkwan, Lee, Sangyoon

Journal:

IEEE Electron Device Letters

Year:

2011

Language:

english

File:

PDF, 224 KB

english, 2011

26

Verification of Interface State Properties of a-InGaZnO Thin-Film Transistors With $\hbox{SiN}_{x}$ and $ \hbox{SiO}_{2}$ Gate Dielectrics by Low-Frequency Noise Measurements

Choi, Hyun-Sik, Jeon, Sanghun, Kim, Hojung, Shin, Jaikwang, Kim, Changjung, Chung, U-In

Journal:

IEEE Electron Device Letters

Year:

2011

Language:

english

File:

PDF, 347 KB

english, 2011

27

Vertical Silicon Nanowire Gate-All-Around Field Effect Transistor Based Nanoscale CMOS

Maheshwaram, Satish, Manhas, S. K., Kaushal, Gaurav, Anand, Bulusu, Singh, Navab

Journal:

IEEE Electron Device Letters

Year:

2011

Language:

english

File:

PDF, 585 KB

english, 2011

28

Analysis of Transient Currents During Ultrafast Switching of $\hbox{TiO}_{2}$ Nanocrossbar Devices

Hermes, C., Wimmer, M., Menzel, S., Fleck, K., Bruns, G., Salinga, M., Bottger, U., Bruchhaus, R., Schmitz-Kempen, T., Wuttig, M., Waser, R.

Journal:

IEEE Electron Device Letters

Year:

2011

Language:

english

File:

PDF, 290 KB

english, 2011

29

A Novel Self-Aligned Raised Source/Drain Polysilicon Thin-Film Transistor With a High-Current Structure

Chien, Feng-Tso, Chen, Chii-Wen, Liao, Chien-Nan, Lee, Tien-Chun, Wang, Chi-Ling, Cheng, Ching-Hwa, Chiu, Hsien-Chin, Tsai, Yao-Tsung

Journal:

IEEE Electron Device Letters

Year:

2011

Language:

english

File:

PDF, 428 KB

english, 2011

30

Efficiency Enhancement of InGaN-Based Multiple Quantum Well Solar Cells Employing Antireflective ZnO Nanorod Arrays

Lin, G. J., Lai, K. Y., Lin, C. A., Lai, Y.-L., He, J. H.

Journal:

IEEE Electron Device Letters

Year:

2011

Language:

english

File:

PDF, 256 KB

english, 2011

31

Low-Power and Highly Reliable Multilevel Operation in $ \hbox{ZrO}_{2}$ 1T1R RRAM

Wu, Ming-Chi, Lin, Yi-Wei, Jang, Wen-Yueh, Lin, Chen-Hsi, Tseng, Tseung-Yuen

Journal:

IEEE Electron Device Letters

Year:

2011

Language:

english

File:

PDF, 329 KB

english, 2011

32

Through-Oxide-Via-Induced Back-Gate Effect in 3-D Integrated FDSOI Devices

Trivedi, Amit Ranjan, Mukhopadhyay, Saibal

Journal:

IEEE Electron Device Letters

Year:

2011

Language:

english

File:

PDF, 354 KB

english, 2011

33

Novel Dielectric-Engineered Trapping-Charge Poly-Si-TFT Memory With a TiN–Alumina–Nitride–Vacuum–Silicon Structure

Wu, Chun-Yu, Liu, Yen-Ting, Liao, Ta-Chuan, Yu, Ming H., Cheng, Huang-Chung

Journal:

IEEE Electron Device Letters

Year:

2011

Language:

english

File:

PDF, 348 KB

english, 2011

34

Tunnel Oxide Nitridation Effect on the Evolution of $V_{t}$ Instabilities (RTS/QED) and Defect Characterization for Sub-40-nm Flash Memory

Kim, Taehoon, He, Deping, Morinville, Keith, Sarpatwari, Karthik, Millemon, Benjamin, Goda, Akira, Kessenich, Jeff

Journal:

IEEE Electron Device Letters

Year:

2011

Language:

english

File:

PDF, 422 KB

english, 2011

35

The Improvement of Output Characteristics in Tensile Strained-Si-on-Insulator NMOSFET by Channel Band Gap Adjustment

Chang, Hsu-Yu, Woo, Jason C. S.

Journal:

IEEE Electron Device Letters

Year:

2011

Language:

english

File:

PDF, 406 KB

english, 2011

36

Dopant Activation in Arsenic-Implanted Si by Susceptor-Assisted Low-Temperature Microwave Anneal

Vemuri, Rajitha N. P., Gadre, Mandar J., Theodore, N. D., Alford, T. L.

Journal:

IEEE Electron Device Letters

Year:

2011

Language:

english

File:

PDF, 125 KB

english, 2011

37

Design and Fabrication of Dual-Trench Epitaxial Diode Array for High-Density Phase-Change Memory

Zhang, Chao, Song, Zhi-Tang, Wu, Guan-Ping, Liu, Bo, Wan, Xu-Dong, Wang, Lei, Wang, Lian-Hong, Yang, Zuo-Ya, Chen, Bomy, Feng, Song-Lin

Journal:

IEEE Electron Device Letters

Year:

2011

Language:

english

File:

PDF, 561 KB

english, 2011

38

Thermal Stability and Dopant Segregation for Schottky Diodes With Ultrathin Epitaxial $\hbox{NiSi}_{2 - y}$

Luo, Jun, Gao, Xindong, Qiu, Zhi-Jun, Lu, Jun, Wu, Dongping, Zhao, Chao, Li, Junfeng, Chen, Dapeng, Hultman, Lars, Zhang, Shi-Li

Journal:

IEEE Electron Device Letters

Year:

2011

Language:

english

File:

PDF, 360 KB

english, 2011

39

Scalable High-Performance Phase-Change Memory Employing CVD GeBiTe

Lee, Jinil, Cho, Sunglae, Ahn, Dongho, Kang, Mansug, Nam, Seokwoo, Kang, Ho-Kyu, Chung, Chilhee

Journal:

IEEE Electron Device Letters

Year:

2011

Language:

english

File:

PDF, 420 KB

english, 2011

40

Bilayer Source/Drain Electrodes Self-Aligned With Fluoropolymer Dielectrics for Stable High-Performance Organic TFTs

Moon, Hanul, Kim, Mincheol, Yoo, Seunghyup

Journal:

IEEE Electron Device Letters

Year:

2011

Language:

english

File:

PDF, 576 KB

english, 2011

41

Porous Organic TFTs for the Applications on Real-Time and Sensitive Gas Sensors

Zan, Hsiao-Wen, Dai, Ming-Zhi, Hsu, Ting-Yu, Lin, Hung-Cheng, Meng, Hsin-Fei, Yang, Yuh-Shyong

Journal:

IEEE Electron Device Letters

Year:

2011

Language:

english

File:

PDF, 387 KB

english, 2011

42

Three-Dimensional Photoacoustic Imaging by a CMOS Micromachined Capacitive Ultrasonic Sensor

Li, Meng-Lin, Wang, Po-Hsun, Liao, Pei-Liang, Lu, Michael S.-C.

Journal:

IEEE Electron Device Letters

Year:

2011

Language:

english

File:

PDF, 536 KB

english, 2011

43

Subthreshold Characteristics of MOS Transistors With $ \hbox{CeO}_{2}/\hbox{La}_{2}\hbox{O}_{3}$ Stacked Gate Dielectric

Wong, Hei, Yang, B. L., Kakushima, K., Iwai, Hiroshi

Journal:

IEEE Electron Device Letters

Year:

2011

Language:

english

File:

PDF, 132 KB

english, 2011

44

Application of a TDDB Model to the Optimization of the Programming Voltage and Dimensions of Antifuse Bitcells

Deloge, Matthieu, Allard, Bruno, Candelier, Philippe, Damiens, Joël, Le-Roux, Elise, Rafik, Mustapha

Journal:

IEEE Electron Device Letters

Year:

2011

Language:

english

File:

PDF, 284 KB

english, 2011

45

High-Speed Selector–Driver Using Abrupt Delta-Doped InP/InGaAs/InP DHBTs

Driad, R., Makon, R. E., Ritter, D.

Journal:

IEEE Electron Device Letters

Year:

2011

Language:

english

File:

PDF, 417 KB

english, 2011

46

Effects of a HfMoN Metal Gate and Self-Aligned Fluorine-Ion Implantation on the Negative-Bias Temperature Instability of pMOSFETs With $\hbox{Gd}_{2} \hbox{O}_{3}$ Gate Dielectrics

Wang, Jer-Chyi, Peng, Hsing-Kan, Lai, Chao-Sung, Chou, Pai-Chi, Lee, Min-Jer

Journal:

IEEE Electron Device Letters

Year:

2011

Language:

english

File:

PDF, 289 KB

english, 2011

47

Demonstration and Electrical Performance Investigation of Wafer-Level Cu Oxide Hybrid Bonding Schemes

Chen, Kuan-Neng, Xu, Zheng, Lu, Jian-Qiang

Journal:

IEEE Electron Device Letters

Year:

2011

Language:

english

File:

PDF, 459 KB

english, 2011

48

Improved Resistive Switching Uniformity in $ \hbox{Cu/HfO}_{2}/\hbox{Pt}$ Devices by Using Current Sweeping Mode

Lian, Wentai, Lv, Hangbing, Liu, Qi, Long, Shibing, Wang, Wei, Wang, Yan, Li, Yingtao, Zhang, Sen, Dai, Yuehua, Chen, Junning, Liu, Ming

Journal:

IEEE Electron Device Letters

Year:

2011

Language:

english

File:

PDF, 426 KB

english, 2011

49

Transconductance Degradation in Near-THz InP Double-Heterojunction Bipolar Transistors

Jain, Vibhor, Rodwell, Mark J. W.

Journal:

IEEE Electron Device Letters

Year:

2011

Language:

english

File:

PDF, 363 KB

english, 2011