Fabrication of 150-nm T-Gate Metamorphic AlInAs/GaInAs...

IEEE Electron Device Letters 2011 / 09 Vol. 32; Iss. 9

Fabrication of 150-nm T-Gate Metamorphic AlInAs/GaInAs HEMTs on GaAs Substrates by MOCVD

Li, Haiou, Feng, Zhihong, Tang, Chak Wah, Lau, Kei May
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Volume:
32
Language:
english
Journal:
IEEE Electron Device Letters
DOI:
10.1109/LED.2011.2159824
Date:
September, 2011
File:
PDF, 200 KB
english, 2011
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