Electric Field Distribution Around Drain-Side Gate Edge in AlGaN/GaN HEMTs: Analytical Approach
Si, Jia, Wei, Jin, Chen, Wanjun, Zhang, BoVolume:
60
Language:
english
Journal:
IEEE Transactions on Electron Devices
DOI:
10.1109/TED.2013.2272055
Date:
October, 2013
File:
PDF, 1.05 MB
english, 2013