Atomic Layer Epitaxy AlN for Enhanced AlGaN/GaN HEMT...

IEEE Electron Device Letters 2013 / 09 Vol. 34; Iss. 9

Atomic Layer Epitaxy AlN for Enhanced AlGaN/GaN HEMT Passivation

Koehler, Andrew D., Nepal, Neeraj, Anderson, Travis J., Tadjer, Marko J., Hobart, Karl D., Eddy, Charles R., Kub, Francis J.
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Volume:
34
Language:
english
Journal:
IEEE Electron Device Letters
DOI:
10.1109/LED.2013.2274429
Date:
September, 2013
File:
PDF, 677 KB
english, 2013
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