Very Fast Dynamics of Threshold Voltage Drifts in GaN-Based...

IEEE Electron Device Letters 2013 / 09 Vol. 34; Iss. 9

Very Fast Dynamics of Threshold Voltage Drifts in GaN-Based MIS-HEMTs

Lagger, Peter, Schiffmann, Alexander, Pobegen, Gregor, Pogany, Dionyz, Ostermaier, Clemens
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Volume:
34
Language:
english
Journal:
IEEE Electron Device Letters
DOI:
10.1109/LED.2013.2272095
Date:
September, 2013
File:
PDF, 948 KB
english, 2013
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