N-Face Metal–Insulator–Semiconductor High-Electron-Mobility...

IEEE Electron Device Letters 2008 / 10 Vol. 29; Iss. 10

N-Face Metal–Insulator–Semiconductor High-Electron-Mobility Transistors With AlN Back-Barrier

Man Hoi Wong,, Yi Pei,, Rongming Chu,, Rajan, S., Swenson, B.L., Brown, D.F., Keller, S., DenBaars, S.P., Speck, J.S., Mishra, U.K.
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Volume:
29
Language:
english
Journal:
IEEE Electron Device Letters
DOI:
10.1109/LED.2008.2003543
Date:
October, 2008
File:
PDF, 374 KB
english, 2008
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