Volume 29; Issue 10

IEEE Electron Device Letters

Volume 29; Issue 10

1

Carrier Transport in High-Mobility III–V Quantum-Well Transistors and Performance Impact for High-Speed Low-Power Logic Applications

Dewey, G., Hudait, M.K., Kangho Lee, Pillarisetty, R., Rachmady, W., Radosavljevic, M., Rakshit, T., Chau, R.

Journal:

IEEE Electron Device Letters

Year:

2008

Language:

english

File:

PDF, 489 KB

english, 2008

2

Demonstration of Schottky Barrier NMOS Transistors With Erbium Silicided Source/Drain and Silicon Nanowire Channel

Eu Jin Tan,, Kin-Leong Pey,, Singh, N., Guo-Qiang Lo,, Dong Zhi Chi,, Yoke King Chin,, Keat Mun Hoe,, Guangda Cui,, Pooi See Lee,

Journal:

IEEE Electron Device Letters

Year:

2008

Language:

english

File:

PDF, 340 KB

english, 2008

3

Improvement of the Performance of TiHfO MIM Capacitors by Using a Dual Plasma Treatment of the Lower Electrode

Cheng, C. H., Pan, H. C., Huang, C. C., Chou, C. P., Hsiao, C. N., Hu, J., Hwang, M., Arikado, T., McAlister, S. P., Chin, Albert

Journal:

IEEE Electron Device Letters

Year:

2008

Language:

english

File:

PDF, 289 KB

english, 2008

4

A 1680-V (at 1 $\hbox{mA/cm}^{2}$) 54-A (at 780 $\hbox{W/cm}^{2}$) Normally ON 4H-SiC JFET With 0.143- $\hbox{cm}^{2}$ Active Area

Veliadis, V., McNutt, T., Snook, M., Hearne, H., Potyraj, P., Scozzie, C.

Journal:

IEEE Electron Device Letters

Year:

2008

Language:

english

File:

PDF, 498 KB

english, 2008

5

N-Face Metal–Insulator–Semiconductor High-Electron-Mobility Transistors With AlN Back-Barrier

Man Hoi Wong,, Yi Pei,, Rongming Chu,, Rajan, S., Swenson, B.L., Brown, D.F., Keller, S., DenBaars, S.P., Speck, J.S., Mishra, U.K.

Journal:

IEEE Electron Device Letters

Year:

2008

Language:

english

File:

PDF, 374 KB

english, 2008

6

TEM Observation of Crack- and Pit-Shaped Defects in Electrically Degraded GaN HEMTs

Chowdhury, U., Jimenez, J.L., Lee, C., Beam, E., Saunier, P., Balistreri, T., Seong-Yong Park,, Taehun Lee,, Wang, J., Kim, M.J., Jungwoo Joh,, del Alamo, J.A.

Journal:

IEEE Electron Device Letters

Year:

2008

Language:

english

File:

PDF, 250 KB

english, 2008

7

Edge Encroachments and Suppressions of Tunnel Oxide in Flash Memory Cells

. Ching-yuan Ho, . Chun-hsing Shih

Journal:

IEEE Electron Device Letters

Year:

2008

Language:

english

File:

PDF, 326 KB

english, 2008

8

Journal:

IEEE Electron Device Letters

Language:

english

File:

PDF, 437 KB

english,

9

Improvement of Resistive Switching Characteristics in $\hbox{SrZrO}_{3}$ Thin Films With Embedded Cr Layer

Lin, Chih-Yang, Lin, Meng-Han, Wu, Ming-Chi, Lin, Chen-Hsi, Tseng, Tseung-Yuen

Journal:

IEEE Electron Device Letters

Year:

2008

Language:

english

File:

PDF, 221 KB

english, 2008

10

The Impact of Thermal Boundary Resistance in Phase-Change Memory Devices

Reifenberg, J.P., Kencke, D.L., Goodson, K.E.

Journal:

IEEE Electron Device Letters

Year:

2008

Language:

english

File:

PDF, 261 KB

english, 2008

11

Improved Electrical Properties of Ge p-MOSFET With $ \hbox{HfO}_{2}$ Gate Dielectric by Using $\hbox{TaO}_{x} \hbox{N}_{y}$ Interlayer

Xu, J.P., Zhang, X.F., Li, C.X., Lai, P.T., Chan, C.L.

Journal:

IEEE Electron Device Letters

Year:

2008

Language:

english

File:

PDF, 443 KB

english, 2008

12

Large-Format Voltage-Tunable Dual-Band Quantum-Well Infrared Photodetector Focal Plane Array for Third-Generation Thermal Imagers

Eker, S. U., Kaldirim, M., Arslan, Y., Besikci, C.

Journal:

IEEE Electron Device Letters

Year:

2008

Language:

english

File:

PDF, 123 KB

english, 2008

13

Flash Memories for IC Design

Larcher, L., Padovani, A., Pavan, P., Fantini, P., Calderoni, A., Mauri, A., Benvenuti, A.

Journal:

IEEE Electron Device Letters

Year:

2008

Language:

english

File:

PDF, 389 KB

english, 2008

14

The Characteristics of $\hbox{H}^{+}$ Ion-Sensitive Transistor Driving With MOS Hybrid Mode Operation

Kwon, Hyurk-Choon, Kwon, Dae-Hyuk, Sawada, Kazuaki, Kang, Shin-Won

Journal:

IEEE Electron Device Letters

Year:

2008

Language:

english

File:

PDF, 499 KB

english, 2008

15

Unlimited High Breakdown Voltage by Natural Super Junction of Polarized Semiconductor

Ishida, Hidetoshi, Shibata, Daisuke, Yanagihara, Manabu, Uemoto, Yasuhiro, Matsuo, Hisayoshi, Ueda, Tetsuzo, Tanaka, Tsuyoshi, Ueda, Daisuke

Journal:

IEEE Electron Device Letters

Year:

2008

Language:

english

File:

PDF, 300 KB

english, 2008

16

Threshold Voltage Modulation Using $\hbox{N}_{2}^{+}$ Implantation Into Substrate for Ni Fully Silicided Gate/High-$k$ NMOS

Yamashita, T., Nishida, Y., Eikyu, K., Oda, H., Inoue, Y., Shibahara, K.

Journal:

IEEE Electron Device Letters

Year:

2008

Language:

english

File:

PDF, 140 KB

english, 2008

17

ZnO-Based Low-Voltage Inverter With Quantum-Well-Structured Nanohybrid Dielectric

Sung Hoon Cha,, Min Suk Oh,, Lee, K.H., Choi, J.-M., Lee, B.H., Sung, M.M., Seongil Im,

Journal:

IEEE Electron Device Letters

Year:

2008

Language:

english

File:

PDF, 446 KB

english, 2008

18

A Simple Model of DIGBL Effect for Polysilicon Films and Polysilicon Thin-Film Transistors

Wu, Wei-Jing, Yao, Ruo-He

Journal:

IEEE Electron Device Letters

Year:

2008

Language:

english

File:

PDF, 154 KB

english, 2008

19

Fabrication and Thermal Analysis of Wafer-Level Light-Emitting Diode Packages

Kang, Jeung-Mo, Choi, Jeong-Hyeon, Kim, Du-Hyun, Kim, Jae-Wook, Song, Yong-Seon, Kim, Geun-Ho, Han, Sang-Kook

Journal:

IEEE Electron Device Letters

Year:

2008

Language:

english

File:

PDF, 539 KB

english, 2008

20

Corrections to “Novel Delta-Doped InAlGaP/GaAs Heterojunction Bipolar Transistor” [Jul 08 671-673]

Lin, Yu-Shyan, Jiang, Jia-Jhen

Journal:

IEEE Electron Device Letters

Year:

2008

File:

PDF, 37 KB

2008

21

Dopant Migration-Induced Interface Dipole Effect in n-Doped GaAs/AlGaAs Terahertz Detectors

Jit, S., Weerasekara, A.B., Jayasinghe, R.C., Matsik, S.G., Perera, A., Buchanan, M., Sproule, G.I., Liu, H.C., Stintz, A., Krishna, S., Khanna, S.P., Lachab, M., Linfield, E.H.

Journal:

IEEE Electron Device Letters

Year:

2008

Language:

english

File:

PDF, 310 KB

english, 2008

22

Comments on “High Performance Inversion-Type Enhancement-Mode InGaAs MOSFET With Maximum Drain Current Exceeding 1 A/mm”

Thayne, Iain G., Hill, Richard J. W., Moran, David A. J., Kalna, Karol, Asenov, Asen, Passlack, Matthias

Journal:

IEEE Electron Device Letters

Year:

2008

Language:

english

File:

PDF, 73 KB

english, 2008

23

Equivalent Circuit Model for Si Avalanche Photodetectors Fabricated in Standard CMOS Process

Lee, Myung-Jae, Kang, Hyo-Soon, Choi, Woo-Young

Journal:

IEEE Electron Device Letters

Year:

2008

Language:

english

File:

PDF, 402 KB

english, 2008

24

Low-Voltage and High-Responsivity Germanium Bipolar Phototransistor for Optical Detections in the Near-Infrared Regime

Kah-Wee Ang,, Ming-Bin Yu,, Guo-Qiang Lo,, Dim-Lee Kwong,

Journal:

IEEE Electron Device Letters

Year:

2008

Language:

english

File:

PDF, 596 KB

english, 2008

25

Hot-Spot Detection in Integrated Circuits by Substrate Heat-Flux Sensing

Perpina, X., Altet, J., Jorda, X., Vellvehi, M., Millan, J., Mestres, N.

Journal:

IEEE Electron Device Letters

Year:

2008

Language:

english

File:

PDF, 282 KB

english, 2008

26

With Common-Emitter Current Gain of 50

Ghandi, R., Hyung-Seok Lee,, Domeij, M., Buono, B., Zetterling, C.-M., Ostling, M.

Journal:

IEEE Electron Device Letters

Year:

2008

Language:

english

File:

PDF, 209 KB

english, 2008

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