Temperature dependence of the barrier at the tetrahedral...

Semiconductor Science and Technology 2001 / 06 Vol. 16; Iss. 6

Temperature dependence of the barrier at the tetrahedral amorphous carbon-silicon interface

Hastas, N A, Dimitriadis, C A, Logothetidis, S, Angelis, C T, Konofaos, N, Evangelou, E K
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Volume:
16
Language:
english
Journal:
Semiconductor Science and Technology
DOI:
10.1088/0268-1242/16/6/310
Date:
June, 2001
File:
PDF, 91 KB
english, 2001
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