Volume 16; Issue 6

Semiconductor Science and Technology

Volume 16; Issue 6

1

The influence of growth conditions on the quality of CdZnTe single crystals

Franc, J, Grill, R, Hlídek, P, Belas, E, Turjanska, L, Höschl, P, Turkevych, I, Toth, A L, Moravec, P, Sitter, H

Journal:

Semiconductor Science and Technology

Year:

2001

Language:

english

File:

PDF, 185 KB

english, 2001

2

The dependence of UMOSFET characteristics and reliability on geometry and processing

Suliman, S A, Gollagunta, N, Trabzon, L, Hao, J, Ridley, R S, Knoedler, C M, Dolny, G M, Awadelkarim, O O, Fonash, S J

Journal:

Semiconductor Science and Technology

Year:

2001

Language:

english

File:

PDF, 396 KB

english, 2001

3

Junction effects of p-Cu 2 O photocathode with layers of hole transfer sites (Au) and electron transfer sites (NiO) at the electrolyte interface

Fernando, C A N, Silva, L A A De, Mehra, R M, Takahashi, K

Journal:

Semiconductor Science and Technology

Year:

2001

Language:

english

File:

PDF, 201 KB

english, 2001

4

The structure and electronic properties of silicon oxynitride gate dielectrics

Plucinski, K J, Kityk, I V, Kasperczyk, J, Sahraoui, B

Journal:

Semiconductor Science and Technology

Year:

2001

Language:

english

File:

PDF, 254 KB

english, 2001

5

Temperature dependence of the barrier at the tetrahedral amorphous carbon-silicon interface

Hastas, N A, Dimitriadis, C A, Logothetidis, S, Angelis, C T, Konofaos, N, Evangelou, E K

Journal:

Semiconductor Science and Technology

Year:

2001

Language:

english

File:

PDF, 91 KB

english, 2001

6

Reversibility of the island shape, volume and density in Stranski-Krastanow growth

Ledentsov, N N, Shchukin, V A, Bimberg, D, Ustinov, V M, Cherkashin, N A, Musikhin, Yu G, Volovik, B V, Cirlin, G E, Alferov, Zh I

Journal:

Semiconductor Science and Technology

Year:

2001

Language:

english

File:

PDF, 188 KB

english, 2001

7

Electronic properties of Si δ-doped GaAs under an applied electric field

Ozturk, E, Ergun, Y, Sari, H, Sokmen, I

Journal:

Semiconductor Science and Technology

Year:

2001

Language:

english

File:

PDF, 184 KB

english, 2001

8

The defect responsible for non-radiative recombination in GaAs materials

Bourgoin, J C, Angelis, N De

Journal:

Semiconductor Science and Technology

Year:

2001

Language:

english

File:

PDF, 88 KB

english, 2001

9

Defects and defect behaviour in GaAs grown at low temperature

Stellmacher, M, Bisaro, R, Galtier, P, Nagle, J, Khirouni, K, Bourgoin, J C

Journal:

Semiconductor Science and Technology

Year:

2001

Language:

english

File:

PDF, 112 KB

english, 2001

10

Melting temperatures of semiconductor nanocrystals in the mesoscopic size range

Zhang, Z, Zhao, M, Jiang, Q

Journal:

Semiconductor Science and Technology

Year:

2001

Language:

english

File:

PDF, 188 KB

english, 2001

11

Preparation and optical properties of InAs 0.4 P 0.6 nanocrystal alloy embedded in SiO 2 thin films

Zheng, M J, Zhang, X Y, Yang, L, Liang, C H, Zhang, L D

Journal:

Semiconductor Science and Technology

Year:

2001

Language:

english

File:

PDF, 143 KB

english, 2001

12

Model for the trap-assisted tunnelling current through very thin SiO 2 /ZrO 2 gate dielectric stacks

Houssa, M, Stesmans, A, Heyns, M M

Journal:

Semiconductor Science and Technology

Year:

2001

Language:

english

File:

PDF, 155 KB

english, 2001

13

Experimental study of the hot-carrier impact ionization photovoltaic effect in pulsed-CO 2 -laser-excited silicon junctions

Encinas-Sanz, F, Marín, M, Guerra, J M

Journal:

Semiconductor Science and Technology

Year:

2001

Language:

english

File:

PDF, 209 KB

english, 2001

14

SiGe HBTs for application in BiCMOS technology: I. Stability, reliability and material parameters

Jain, S C, Decoutere, S, Willander, M, Maes, H E

Journal:

Semiconductor Science and Technology

Year:

2001

Language:

english

File:

PDF, 335 KB

english, 2001

15

Reactive ion etching of vertical GaN mesas by the addition of CH 4 to BCl 3 /H 2 /Ar inductively coupled plasma

Lee, Byung-Teak, Jung, S-Y, Lee, J-L, Park, Y-J, Paek, M C, Cho, K-I

Journal:

Semiconductor Science and Technology

Year:

2001

Language:

english

File:

PDF, 241 KB

english, 2001

16

Cathodoluminescence studies of self-organized CdTe/ZnTe quantum dot structure grown by MBE: in-plane and in-depth properties of the system

Godlewski, M, Mackowski, S, Karczewski, G, Goldys, E M, Phillips, M R

Journal:

Semiconductor Science and Technology

Year:

2001

Language:

english

File:

PDF, 127 KB

english, 2001

17

A simplified fabrication process for HgCdTe photoconductive detectors using CH 4 /H 2 reactive-ion-etching-induced blocking contacts

Smith, E P G, Winchester, K J, Musca, C A, Dell, J M, Faraone, L

Journal:

Semiconductor Science and Technology

Year:

2001

Language:

english

File:

PDF, 156 KB

english, 2001

18

Higher-dimensional effects in a distributed Schottky barrier transmission line

Ziegler, Veronique, Lonngren, Karl E

Journal:

Semiconductor Science and Technology

Year:

2001

Language:

english

File:

PDF, 91 KB

english, 2001

19

Effect of hydrostatic pressure on the energies of deep-level impurity centres in semiconductors: gold in germanium

Daunov, M I, Kamilov, I K, Gabibov, S F

Journal:

Semiconductor Science and Technology

Year:

2001

Language:

english

File:

PDF, 65 KB

english, 2001

To build up a library is to create a life. It’s never just a random collection of books.

— Carlos María Domínguez

Official channel

Z-Library Desktop Launcher

Tor version

Z-Library

Z-Library Since 2009 support@z-lib.do

EnglishРусскийEspañolItalianoελληνικάاللغة العربيةBahasa IndonesiaBahasa Malaysiaहिन्दीDeutschFrançaisPortuguêsУкраїнськаPolski中文繁體中文日本語Tiếng ViệtAzərbaycan DiliՀայոց լեզուภาษาไทยTürk Diliქართველიবাংলাپښتوతెలుగుاردو한국어SrpskiБългарски