Gate-Recessed InAlN/GaN HEMTs on SiC Substrate With $...

IEEE Electron Device Letters 2009 / 09 Vol. 30; Iss. 9

Gate-Recessed InAlN/GaN HEMTs on SiC Substrate With $ \hbox{Al}_{2}\hbox{O}_{3}$ Passivation

Chung, J.W., Saadat, O.I., Tirado, J.M., Xiang Gao,, Guo, S., Palacios, T.
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Volume:
30
Language:
english
Journal:
IEEE Electron Device Letters
DOI:
10.1109/LED.2009.2026718
Date:
September, 2009
File:
PDF, 404 KB
english, 2009
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