245-GHz InAlN/GaN HEMTs With Oxygen Plasma Treatment

IEEE Electron Device Letters 2011 / 06 Vol. 32; Iss. 6

245-GHz InAlN/GaN HEMTs With Oxygen Plasma Treatment

Lee, Dong Seup, Chung, Jinwook W., Wang, Han, Gao, Xiang, Guo, Shiping, Fay, Patrick, Palacios, Tomás
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Volume:
32
Language:
english
Journal:
IEEE Electron Device Letters
DOI:
10.1109/LED.2011.2132751
Date:
June, 2011
File:
PDF, 329 KB
english, 2011
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