Volume 32; Issue 6

IEEE Electron Device Letters

Volume 32; Issue 6

1

Channel-Length-Dependent Transport Behaviors of Graphene Field-Effect Transistors

Shu-Jen Han, Zhihong Chen, Bol, A.A., Yanning Sun

Journal:

IEEE Electron Device Letters

Year:

2011

Language:

english

File:

PDF, 679 KB

english, 2011

2

Crossbar Logic Using Bipolar and Complementary Resistive Switches

Rosezin, R., Linn, E., Kugeler, C., Bruchhaus, R., Waser, R.

Journal:

IEEE Electron Device Letters

Year:

2011

Language:

english

File:

PDF, 452 KB

english, 2011

3

Evidence of a Novel Source of Random Telegraph Signal in CMOS Image Sensors

Goiffon, V., Magnan, P., Martin-Gonthier, P., Virmontois, C., Gaillardin, M.

Journal:

IEEE Electron Device Letters

Year:

2011

Language:

english

File:

PDF, 353 KB

english, 2011

4

Capitalizing on the Glass-Etching Effect of Silver Plating Chemistry to Contact Si Solar Cells With Homogeneous 100–110 $\Omega/\hbox{sq}$ Emitters

Ebong, Abasifreke, Cooper, Ian B., Rounsaville, Brian C., Rohatgi, Ajeet, Dovrat, Miki, Kritchman, Eli, Brusilovsky, David, Benichou, Axel

Journal:

IEEE Electron Device Letters

Year:

2011

Language:

english

File:

PDF, 450 KB

english, 2011

5

245-GHz InAlN/GaN HEMTs With Oxygen Plasma Treatment

Lee, Dong Seup, Chung, Jinwook W., Wang, Han, Gao, Xiang, Guo, Shiping, Fay, Patrick, Palacios, TomÃ¡s

Journal:

IEEE Electron Device Letters

Year:

2011

Language:

english

File:

PDF, 329 KB

english, 2011

6

Modeling of Current-Return-Path Effect on Single-Ended Inductor in Millimeter-Wave Regime

H. Wang, L. Zhang, D. Yang, D. Zeng, Y. Wang, Z. Yu

Journal:

IEEE Electron Device Letters

Year:

2011

Language:

english

File:

PDF, 368 KB

english, 2011

7

Modeling and Separate Extraction of Gate-Bias- and Channel-Length-Dependent Intrinsic and Extrinsic Source–Drain Resistances in MOSFETs

H. Bae, J. Jang, J. S. Shin, D. Yun, J. Lee, T. W. Kim, D. H. Kim, D. M. Kim

Journal:

IEEE Electron Device Letters

Year:

2011

Language:

english

File:

PDF, 698 KB

english, 2011

8

Very Low Reset Current for an RRAM Device Achieved in the Oxygen-Vacancy-Controlled Regime

N. Raghavan, K. L. Pey, X. Li, W. H. Liu, X. Wu, M. Bosman, T. Kauerauf

Journal:

IEEE Electron Device Letters

Year:

2011

Language:

english

File:

PDF, 674 KB

english, 2011

9

High-Performance Amorphous Indium–Gallium–Zinc–Oxide Thin-Film Transistor With a Self-Aligned Etch Stopper Patterned by Back-Side UV Exposure

D. Geng, D. H. Kang, J. Jang

Journal:

IEEE Electron Device Letters

Year:

2011

Language:

english

File:

PDF, 367 KB

english, 2011

10

Wang, Nan, Tsai, J. M., Hsiao, Fu-Li, Soon, B. W., Kwong, Dim-Lee, Palaniapan, Moorthi, Lee, Chengkuo

Journal:

IEEE Electron Device Letters

Year:

2011

Language:

english

File:

PDF, 293 KB

english, 2011

11

$hbox{Al}_{2} hbox{O}_{3}$/n-InAs Metal–Oxide–Semiconductor Capacitors With Various Surface Treatments]]>

Trinh, H. D., Brammertz, G., Chang, E. Y., Kuo, C. I., Lu, C. Y., Lin, Y. C., Nguyen, H. Q., Wong, Y. Y., Tran, B. T., Tran, K.

Journal:

IEEE Electron Device Letters

Year:

2011

Language:

english

File:

PDF, 379 KB

english, 2011

12

Enhanced Power and Breakdown in III-N RF Switches With a Slow Gate

Sattu, A., Deng, J., Billingsley, D., Yang, J., Shur, M., Gaska, R., Simin, G.

Journal:

IEEE Electron Device Letters

Year:

2011

Language:

english

File:

PDF, 159 KB

english, 2011

13

Improved Uniformity of Sequential Lateral Solidification Thin-Film Transistors

Kang, Myung-Koo, Kim, Si Joon, Kim, Hyun Jae

Journal:

IEEE Electron Device Letters

Year:

2011

Language:

english

File:

PDF, 383 KB

english, 2011

14

Unipolar Resistive Switching Properties of Diamondlike Carbon-Based RRAM Devices

Fu, Di, Xie, Dan, Feng, Tingting, Zhang, Chenhui, Niu, Jiebin, Qian, He, Liu, Litian

Journal:

IEEE Electron Device Letters

Year:

2011

Language:

english

File:

PDF, 373 KB

english, 2011

15

Mechanism Analysis of Off-Leakage Current in an LDD Poly-Si TFT Using Activation Energy

Nakashima, Akihiro, Kimura, Mutsumi

Journal:

IEEE Electron Device Letters

Year:

2011

Language:

english

File:

PDF, 472 KB

english, 2011

16

Junctionless Vertical-Si-Nanowire-Channel-Based SONOS Memory With 2-Bit Storage per Cell

Sun, Y., Yu, H. Y., Singh, N., Leong, K. C., Lo, G. Q., Kwong, D. L.

Journal:

IEEE Electron Device Letters

Year:

2011

Language:

english

File:

PDF, 383 KB

english, 2011

17

RF Model and Verification of Through-Silicon Vias in Fully Integrated SiGe Power Amplifier

Liao, Hsien-Yuan, Chiou, Hwann-Kaeo

Journal:

IEEE Electron Device Letters

Year:

2011

Language:

english

File:

PDF, 360 KB

english, 2011

18

Monolithic Integration of a 4H-Silicon Carbide Vertical JFET and a JBS Diode

Radhakrishnan, Rahul, Zhao, Jian H.

Journal:

IEEE Electron Device Letters

Year:

2011

Language:

english

File:

PDF, 203 KB

english, 2011

19

Impact of NBTI/PBTI on SRAM Stability Degradation

Cheng, Binjie, Brown, Andrew R., Asenov, Asen

Journal:

IEEE Electron Device Letters

Year:

2011

Language:

english

File:

PDF, 539 KB

english, 2011

20

TiN Thickness Impact on BTI Performance

Chen, Chien Liang, King, Ya-Chin

Journal:

IEEE Electron Device Letters

Year:

2011

Language:

english

File:

PDF, 438 KB

english, 2011

21

New Leakage Mechanism and Dielectric Breakdown Layer Detection in Metal-Nanocrystal-Embedded Dual-Layer Memory Gate Stack

Lwin, Zin Zar, Pey, Kin Leong, Raghavan, Nagarajan, Chen, Yining, Mahapatra, Souvik

Journal:

IEEE Electron Device Letters

Year:

2011

Language:

english

File:

PDF, 354 KB

english, 2011

22

Enhancement of Resistive Switching Characteristics in $ \hbox{Al}_{2}\hbox{O}_{3}$-Based RRAM With Embedded Ruthenium Nanocrystals

Chen, Lin, Gou, Hong-Yan, Sun, Qing-Qing, Zhou, Peng, Lu, Hong-Liang, Wang, Peng-Fei, Ding, Shi-Jin, Zhang, DavidWei

Journal:

IEEE Electron Device Letters

Year:

2011

Language:

english

File:

PDF, 320 KB

english, 2011

23

Thermal Sensing With Lithographically Patterned Bimetallic Thin-Film Thermocouples

Varrenti, Andrew R., Zhou, Chuanle, Klock, A. Grace, Chyung, Seung H., Long, Jieyi, Memik, Seda Ogrenci, Grayson, M.

Journal:

IEEE Electron Device Letters

Year:

2011

Language:

english

File:

PDF, 139 KB

english, 2011

24

High-Performance Poly-Si Vertical Nanowire Thin-Film Transistor and the Inverter Demonstration

Le, T. T., Yu, H. Y., Sun, Y., Singh, N., Zhou, X., Shen, N., Lo, G. Q., Kwong, D. L.

Journal:

IEEE Electron Device Letters

Year:

2011

Language:

english

File:

PDF, 473 KB

english, 2011

25

Effects of Surface Orientation on the Performance of Idealized III–V Thin-Body Ballistic n-MOSFETs

Kim, Raseong, Rakshit, Titash, Kotlyar, Roza, Hasan, Sayed, Weber, Cory E.

Journal:

IEEE Electron Device Letters

Year:

2011

Language:

english

File:

PDF, 333 KB

english, 2011

26

Amorphous-Selenium-Based Three-Terminal X-Ray Detector With a Gate

Wang, Kai, Chen, Feng, Allec, Nicholas, Yuan, Fang, Belev, George, Kasap, Safa, Karim, Karim S.

Journal:

IEEE Electron Device Letters

Year:

2011

Language:

english

File:

PDF, 403 KB

english, 2011

27

CMOS Inverter Based on Schottky Source–Drain MOS Technology With Low-Temperature Dopant Segregation

Larrieu, Guilhem, Dubois, Emmanuel

Journal:

IEEE Electron Device Letters

Year:

2011

Language:

english

File:

PDF, 352 KB

english, 2011

28

Temperature Dependence of the Threshold Voltage Shift Induced by Carrier Injection in Integrated STI-Based LDMOS Transistors

Poli, Stefano, Reggiani, Susanna, Denison, Marie, Gnani, Elena, Gnudi, Antonio, Baccarani, Giorgio, Pendharkar, Sameer, Wise, Rick

Journal:

IEEE Electron Device Letters

Year:

2011

Language:

english

File:

PDF, 313 KB

english, 2011

29

Performance Improvement of a Virtual-Ground Nonvolatile Charge-Trap Storage nor-Type Memory Cell With Optimized Junction Dosage for 45-nm Generation Node

Ou, T. F., Tzeng, W. C., Tsai, C. H., Lee, G. D., Ku, S. H., Liu, C. H., Liu, K. W., Zous, N. K., Huang, S. W., Chen, M. S., Lu, W. P., Chen, K. C., Lu, Chih-Yuan

Journal:

IEEE Electron Device Letters

Year:

2011

Language:

english

File:

PDF, 458 KB

english, 2011

30

Low-Temperature Reflow Anneals of Cu on Ru

Yang, C.-C., McFeely, F. R., Li, B., Rosenberg, R., Edelstein, D.

Journal:

IEEE Electron Device Letters

Year:

2011

Language:

english

File:

PDF, 255 KB

english, 2011

31

Aggressively Scaled Strained-Silicon-on-Insulator Undoped-Body High- $\kappa$/Metal-Gate nFinFETs for High-Performance Logic Applications

Maitra, Kingsuk, Khakifirooz, Ali, Kulkarni, Pranita, Basker, Veeraraghavan S., Faltermeier, Jonathan, Jagannathan, Hemanth, Adhikari, Hemant, Yeh, Chun-Chen, Klymko, Nancy R., Saenger, Katherine, Sta

Journal:

IEEE Electron Device Letters

Year:

2011

Language:

english

File:

PDF, 408 KB

english, 2011

32

A SiC Varactor With Large Effective Tuning Range for Microwave Power Applications

Andersson, Christer M., Ejebjork, Niclas, Henry, Anne, Andersson, Sven, Janzen, Erik, Zirath, Herbert, Rorsman, Niklas

Journal:

IEEE Electron Device Letters

Year:

2011

Language:

english

File:

PDF, 250 KB

english, 2011

33

Simple Analytical Bulk Current Model for Long-Channel Double-Gate Junctionless Transistors

Duarte, Juan P., Choi, Sung-Jin, Moon, Dong-Il, Choi, Yang-Kyu

Journal:

IEEE Electron Device Letters

Year:

2011

Language:

english

File:

PDF, 390 KB

english, 2011

34

Extraction of Separated Source and Drain Resistances in Amorphous Indium–Gallium–Zinc Oxide TFTs Through $C$– $V$ Characterization

Bae, Hagyoul, Kim, Sungchul, Bae, Minkyung, Shin, Ja Sun, Kong, Dongsik, Jung, Hyunkwang, Jang, Jaeman, Lee, Jieun, Kim, Dae Hwan, Kim, Dong Myong

Journal:

IEEE Electron Device Letters

Year:

2011

Language:

english

File:

PDF, 457 KB

english, 2011

35

Scaling and Anisotropic Conduction in Electrochemically Deposited Polypyrrole Hybrid Junctions

Pilapil, Matt A., Pillai, Rajesh G., Freund, Michael S., Zhao, Jun Hui, Thomson, Douglas J.

Journal:

IEEE Electron Device Letters

Year:

2011

Language:

english

File:

PDF, 121 KB

english, 2011

36

Stepped Broken-Gap Heterobarrier Tunneling Field-Effect Transistor for Ultralow Power and High Speed

Register, Leonard F., Hasan, Mohammad M., Banerjee, Sanjay K.

Journal:

IEEE Electron Device Letters

Year:

2011

Language:

english

File:

PDF, 377 KB

english, 2011

37

Reset Instability in Pulsed-Operated Unipolar Resistive-Switching Random Access Memory Devices

Nardi, Federico, Cagli, Carlo, Spiga, Sabina, Ielmini, Daniele

Journal:

IEEE Electron Device Letters

Year:

2011

Language:

english

File:

PDF, 283 KB

english, 2011