Novel multi-bit memory device using...

Microelectronic Engineering 2013 / 09 Vol. 109

Novel multi-bit memory device using metal/PVDF–TrFE/graphene stack

Hwang, Hyeon Jun, Yang, Jin Ho, Kang, Soo Cheol, Cho, Chunhum, Kang, Chang Goo, Lee, Young Gon, Lee, Byoung Hun
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Volume:
109
Language:
english
Journal:
Microelectronic Engineering
DOI:
10.1016/j.mee.2013.02.094
Date:
September, 2013
File:
PDF, 1.03 MB
english, 2013
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