Impact of Random Telegraph Noise Profiles on Drain-Current...

IEEE Electron Device Letters 2014 / 01 Vol. 35; Iss. 1

Impact of Random Telegraph Noise Profiles on Drain-Current Fluctuation During Dynamic Gate Bias

Feng, Wei, Dou, Chun Meng, Niwa, Masaaki, Yamada, Keisaku, Ohmori, Kenji
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Volume:
35
Language:
english
Journal:
IEEE Electron Device Letters
DOI:
10.1109/LED.2013.2288981
Date:
January, 2014
File:
PDF, 507 KB
english, 2014
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