Low-Leakage-Current DRAM-Like Memory Using a One-Transistor...

IEEE Electron Device Letters 2014 / 01 Vol. 35; Iss. 1

Low-Leakage-Current DRAM-Like Memory Using a One-Transistor Ferroelectric MOSFET With a Hf-Based Gate Dielectric

Cheng, Chun-Hu, Chin, Albert
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Volume:
35
Language:
english
Journal:
IEEE Electron Device Letters
DOI:
10.1109/LED.2013.2290117
Date:
January, 2014
File:
PDF, 379 KB
english, 2014
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