![](/img/cover-not-exists.png)
Low-Leakage-Current DRAM-Like Memory Using a One-Transistor Ferroelectric MOSFET With a Hf-Based Gate Dielectric
Cheng, Chun-Hu, Chin, AlbertVolume:
35
Language:
english
Journal:
IEEE Electron Device Letters
DOI:
10.1109/LED.2013.2290117
Date:
January, 2014
File:
PDF, 379 KB
english, 2014