Effects of thermal annealing on the electrical properties...

Semiconductor Science and Technology 2002 / 02 Vol. 17; Iss. 2

Effects of thermal annealing on the electrical properties of tetraethylorthosilicate-based oxynitride films deposited on strained-Si 1  x Ge x

Samanta, S K, Bera, L K, Benerjee, H D, Maiti, C K
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Volume:
17
Language:
english
Journal:
Semiconductor Science and Technology
DOI:
10.1088/0268-1242/17/2/309
Date:
February, 2002
File:
PDF, 158 KB
english, 2002
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