Volume 17; Issue 2

Semiconductor Science and Technology

Volume 17; Issue 2

1

Raman investigation of InSe and GaSe single-crystals oxidation

Balitskii, O A, Savchyn, V P, Yukhymchuk, V O

Journal:

Semiconductor Science and Technology

Year:

2002

Language:

english

File:

PDF, 108 KB

english, 2002

2

Argon and nitrogen implantation effects on the structural and optical properties of vacuum evaporated cadmium sulphide thin films

Senthil, K, Mangalaraj, D, Narayandass, Sa K, Hong, Byungyou, Roh, Yonghan, Park, Cheon Seok, Yi, Junsin

Journal:

Semiconductor Science and Technology

Year:

2002

Language:

english

File:

PDF, 238 KB

english, 2002

3

Recombination at the interface between silicon and stoichiometric plasma silicon nitride

Kerr, Mark J, Cuevas, Andres

Journal:

Semiconductor Science and Technology

Year:

2002

Language:

english

File:

PDF, 242 KB

english, 2002

4

Molecular beam epitaxy growth of a planar p n junction on a (111)A GaAs substrate, using the amphoteric property of silicon dopant

Galiev, G, Kaminskii, V, Milovzorov, D, Velihovskii, L, Mokerov, V

Journal:

Semiconductor Science and Technology

Year:

2002

Language:

english

File:

PDF, 177 KB

english, 2002

5

Effects of thermal annealing on the electrical properties of tetraethylorthosilicate-based oxynitride films deposited on strained-Si 1 x Ge x

Samanta, S K, Bera, L K, Benerjee, H D, Maiti, C K

Journal:

Semiconductor Science and Technology

Year:

2002

Language:

english

File:

PDF, 158 KB

english, 2002

6

Optical investigation of CdSe/ZnSe quantum nanostructures

Valakh, M Ya, Ivanov, S V, Mestres, N, Pascual, J, Shubina, T V, Sorokin, S V, Streltchuk, V V, Pozina, G, Monemar, B

Journal:

Semiconductor Science and Technology

Year:

2002

Language:

english

File:

PDF, 199 KB

english, 2002

7

Fractional-dimensional space approach for parabolic-confined polarons

Matos-Abiague, A

Journal:

Semiconductor Science and Technology

Year:

2002

Language:

english

File:

PDF, 183 KB

english, 2002

8

Optimum design of a thermoelectric device

Journal:

Semiconductor Science and Technology

Year:

2002

Language:

english

File:

PDF, 136 KB

english, 2002

9

Depletion-mode and enhancement-mode InGaP/GaAs -HEMTs for low supply-voltage applications

Tsai, M-K, Tan, S-W, Wu, Y-W, Lour, W-S, Yang, Y-J

Journal:

Semiconductor Science and Technology

Year:

2002

Language:

english

File:

PDF, 339 KB

english, 2002

10

Room temperature laser emission of 1.5 m from InAs/InP(311)B quantum dots

Paranthoen, C, Bertru, N, Lambert, B, Dehaese, O, Corre, A Le, Even, J, Loualiche, S, Lissillour, F, Moreau, G, Simon, J C

Journal:

Semiconductor Science and Technology

Year:

2002

Language:

english

File:

PDF, 166 KB

english, 2002

11

Limitations of the saturated drift velocity approximation for time domain modelling

Hambleton, P J, Plimmer, S A, Rees, G J

Journal:

Semiconductor Science and Technology

Year:

2002

Language:

english

File:

PDF, 110 KB

english, 2002

12

Effects of thermal annealing on the optical properties of InGaNAs/GaAs multiple quantum wells

Pomarico, A, Lomascolo, M, Cingolani, R, Egorov, A Yu, Riechert, H

Journal:

Semiconductor Science and Technology

Year:

2002

Language:

english

File:

PDF, 159 KB

english, 2002

13

Time-resolved micro-photoluminescence studies of deep level distribution in selectively regrown GaInP:Fe and GaAs:Fe

Gaarder, A, Marcinkevicius, S, Barrios, C Angulo, Lourdudoss, S

Journal:

Semiconductor Science and Technology

Year:

2002

Language:

english

File:

PDF, 273 KB

english, 2002

14

Physics of the formation of microdefects in dislocation-free monocrystals of float-zone silicon

Talanin, V I, Talanin, I E, Levinson, D I

Journal:

Semiconductor Science and Technology

Year:

2002

Language:

english

File:

PDF, 604 KB

english, 2002

15

Ex situ re-calibration method for low-cost precision epitaxial growth of heterostructure devices

Hayden, R K, Gunnaes, A E, Missous, M, Khan, R, Kelly, M J, Goringe, M J

Journal:

Semiconductor Science and Technology

Year:

2002

Language:

english

File:

PDF, 358 KB

english, 2002

16

Breakdown and generation of interface states in oxynitride thin films on silicon

Journal:

Semiconductor Science and Technology

Year:

2002

Language:

english

File:

PDF, 85 KB

english, 2002