Source/drain induced defects in advanced MOSFETs: what device electrical characterization tells
Mouis, Mireille, Lee, Jae Woo, Jeon, Daeyoung, Shi, Ming, Shin, Minju, Ghibaudo, GérardVolume:
11
Language:
english
Journal:
physica status solidi (c)
DOI:
10.1002/pssc.201300317
Date:
January, 2014
File:
PDF, 411 KB
english, 2014