Volume 11; Issue 1

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Physica status solidi
Volume 11; Issue 1

Physica status solidi

Volume 11; Issue 1

1

Characterisation of electrically active defects

Duffy, Ray, Heringa, Anco

Journal:

Physica status solidi

Year:

2014

Language:

english

File:

PDF, 480 KB

english, 2014

2

Source/drain induced defects in advanced MOSFETs: what device electrical characterization tells

Mouis, Mireille, Lee, Jae Woo, Jeon, Daeyoung, Shi, Ming, Shin, Minju, Ghibaudo, Gérard

Journal:

Physica status solidi

Year:

2014

Language:

english

File:

PDF, 411 KB

english, 2014

3

Atomic scale Monte Carlo simulations of BF 3 plasma immersion ion implantation in Si

La Magna, Antonino, Fisicaro, Giuseppe, Nicotra, Giuseppe, Spiegel, Yohann, Torregrosa, Frank

Journal:

Physica status solidi

Year:

2014

Language:

english

File:

PDF, 549 KB

english, 2014

4

Influence of Poisson equation boundary conditions and quantum corrections to carrier concentrations at material interfaces in TCAD process simulation

Tsibizov, Alexander, Terterian, Arsen, Zechner, Christoph

Journal:

Physica status solidi

Year:

2014

Language:

english

File:

PDF, 587 KB

english, 2014

5

Design and simulation of optically controlled field effect transistors

Sorianello, V., Colace, L., Rajamani, S., Assanto, G.

Journal:

Physica status solidi

Year:

2014

Language:

english

File:

PDF, 330 KB

english, 2014

6

Dopant/carrier profiling for 3D-structures

Vandervorst, Wilfried, Schulze, Andreas, Kambham, Ajay Kumar, Mody, Jay, Gilbert, Matthieu, Eyben, Pierre

Journal:

Physica status solidi

Year:

2014

Language:

english

File:

PDF, 1.69 MB

english, 2014

7

Atomistic investigation of the impact of stress during solid phase epitaxial regrowth

Sklenard, Benoit, Barbe, Jean-Charles, Batude, Perrine, Rivallin, Pierrette, Tavernier, Clement, Cristoloveanu, Sorin, Martin-Bragado, Ignacio

Journal:

Physica status solidi

Year:

2014

Language:

english

File:

PDF, 151 KB

english, 2014

8

Determination of the Si Young's modulus between room and melt temperature using the impulse excitation technique

Swarnakar, Akhilesh K., Van der Biest, Omer, Vanhellemont, Jan

Journal:

Physica status solidi

Year:

2014

Language:

english

File:

PDF, 311 KB

english, 2014

9

Erratum: Growth of GaAs nanowires on Si substrate by molecular beam epitaxy under alternating supply

Kizu, R., Yamaguchi, M., Amano, H.

Journal:

Physica status solidi

Year:

2014

Language:

english

File:

PDF, 647 KB

english, 2014

10

Advanced Extra Functionality CMOS-based Devices

Cristiano, Fuccio, Pichler, Peter, Tavernier, Clément, Windl, Wolfgang

Journal:

Physica status solidi

Year:

2014

Language:

english

File:

PDF, 331 KB

english, 2014

11

Excellence - energy - ethics

Hildebrandt, Stefan, Bahrs, Sabine

Journal:

Physica status solidi

Year:

2014

Language:

english

File:

PDF, 331 KB

english, 2014

12

Deactivation of phosphorus in silicon due to implanted nitrogen

Chang, Ruey-Dar, Lin, Chih-Hung

Journal:

Physica status solidi

Year:

2014

Language:

english

File:

PDF, 400 KB

english, 2014

13

Lattice kinetic Monte Carlo modeling of germanium solid phase epitaxial growth

Gomez-Selles, J. L., Darby, B. L., Jones, K. S., Martin-Bragado, I.

Journal:

Physica status solidi

Year:

2014

Language:

english

File:

PDF, 286 KB

english, 2014

14

New RP-CVD grown ultra-high performance selectively B-doped pure-Ge 20 nm QWs on (100)Si as basis material for post-Si CMOS technology

Mironov, O. A., Hassan, A. H. A., Uhlarz, M., Kiatgamolchai, S., Dobbie, A., Morris, R. J. H., Halpin, J. E., Rhead, S. D., Allred, P., Myronov, M., Gabani, S., Berkutov, I. B., Leadley, D. R.

Journal:

Physica status solidi

Year:

2014

Language:

english

File:

PDF, 998 KB

english, 2014

15

Spin-on-dopant phosphorus diffusion in germanium thin films for near-infrared detectors

Sorianello, V., De Iacovo, A., Colace, L., Fabbri, A., Tortora, L., Assanto, G.

Journal:

Physica status solidi

Year:

2014

Language:

english

File:

PDF, 226 KB

english, 2014

16

Challenges in spacer process development for leading-edge high- k metal gate technology

Koehler, Fabian, Triyoso, Dina H., Hussain, Itasham, Antonioli, Bianca, Hempel, Klaus

Journal:

Physica status solidi

Year:

2014

Language:

english

File:

PDF, 459 KB

english, 2014

17

Large boron-interstitial cluster modelling in BF 3 plasma implanted silicon

Essa, Z., Cristiano, F., Spiegel, Y., Qiu, Y., Boulenc, P., Quillec, M., Taleb, N., Zographos, N., Bedel-Pereira, E., Mortet, V., Burenkov, A., Hackenberg, M., Torregrosa, F., Tavernier, C.

Journal:

Physica status solidi

Year:

2014

Language:

english

File:

PDF, 219 KB

english, 2014

18

Thermal properties of quantum devices in integrated circuits embedded in a chip environment

Käso, M., Wulf, U., Kuˇcera, J., Richter, H., Höntschel, J.

Journal:

Physica status solidi

Year:

2014

Language:

english

File:

PDF, 171 KB

english, 2014

19

Electrical and optical characterization of extended defects induced in p-type Si after Si ion implantation

Nyamhere, Cloud, Cristiano, Fuccio, Olivie, Francios, Bedel-Pereira, Elena, Essa, Zahi

Journal:

Physica status solidi

Year:

2014

Language:

english

File:

PDF, 353 KB

english, 2014

20

Challenges in CMOS-based images

Roy, Francois, Tournier, A., Wehbe-Alause, H., Blanchet, F., Boulenc, P., Leverd, F., Favennec, L., Perrot, C., Pinzelli, L., Gatefait, M., Cherault, N., Jeanjean, D., Carrere, J. P., Augier, C., Ricq

Journal:

Physica status solidi

Year:

2014

Language:

english

File:

PDF, 1.27 MB

english, 2014

21

Gate-engineering-based approach to improve the nanoscale DG MOSFET behavior against interfacial trap effects

Bentrcia, Toufik, Djeffal, Fayçal, Arar, Djemai, Dibi, Zouhir

Journal:

Physica status solidi

Year:

2014

Language:

english

File:

PDF, 361 KB

english, 2014

22

On an improved boron segregation calibration from a particularly sensitive power MOS process

Koffel, S., Burenkov, A., Sekowski, M., Pichler, P., Giubertoni, D., Bersani, M., Knaipp, M., Wachmann, E., Schrems, M., Yamamoto, Y., Bolze, D.

Journal:

Physica status solidi

Year:

2014

Language:

english

File:

PDF, 152 KB

english, 2014

23

Simulation of the boron build-up formation during melting laser thermal annealing

Hackenberg, M., Huet, K., Negru, R., Fisicaro, G., La Magna, A., Taleb, N., Quillec, M., Pichler, P.

Journal:

Physica status solidi

Year:

2014

Language:

english

File:

PDF, 297 KB

english, 2014

24

Surface evolution of very high dose arsenic implants in silicon formed by plasma immersion ion implantation - a long term study

Meirer, Florian, Demenev, Evgeny, Giubertoni, Damiano, Vanzetti, Lia, Gennaro, Salvatore, Fedrizzi, Michele, Pepponi, Giancarlo, Steinhauser, Georg, Vishwanath, Vinayak, Foad, Majeed, Bersani, Massimo

Journal:

Physica status solidi

Year:

2014

Language:

english

File:

PDF, 518 KB

english, 2014

25

Observation of point defect injection from electrical deactivation of arsenic ultra-shallow distributions formed by ultra-low energy ion implantation and laser sub-melt annealing

Demenev, Evgeny, Meirer, Florian, Essa, Zahi, Giubertoni, Damiano, Cristiano, Fuccio, Pepponi, Giancarlo, Gennaro, Salvatore, Bersani, Massimo, Foad, Majeed A.

Journal:

Physica status solidi

Year:

2014

Language:

english

File:

PDF, 383 KB

english, 2014

26

Structural characterization of in-situ silicided contacts textured on p-type [001] silicon

Badalà, Paolo, Faro, Giuseppe, Marcellino, Cinzia, Pellegrino, Giovanna, Santangelo, Antonello, Alberti, Alessandra

Journal:

Physica status solidi

Year:

2014

Language:

english

File:

PDF, 814 KB

english, 2014

27

Role of the early stages of Ni-Si interaction on the formation of transrotational Ni-silicides

Alberti, Alessandra, Bongiorno, Corrado, Spinella, Corrado, Magna, Antonino La

Journal:

Physica status solidi

Year:

2014

Language:

english

File:

PDF, 1.45 MB

english, 2014

28

Point defect engineering study of phosphorus ion implanted germanium

Razali, M. A., Secchi, M., Bersani, M., Gwilliam, R. M.

Journal:

Physica status solidi

Year:

2014

Language:

english

File:

PDF, 239 KB

english, 2014

29

Laser thermal anneal formation of atomically-flat low-resistive germanide contacts

Huet, K., Shayesteh, M., Toqué-Tresonne, I., Negru, R., Daunt, C. L. M., Kelly, N., O'Connell, D., Yu, R., Djara, V., Carolan, P., Petkov, N., Duffy, R.

Journal:

Physica status solidi

Year:

2014

Language:

english

File:

PDF, 937 KB

english, 2014

30

TCAD simulation of thermally evaporated germanium

De Iacovo, A., Sorianello, V., Colace, L., Assanto, G.

Journal:

Physica status solidi

Year:

2014

Language:

english

File:

PDF, 175 KB

english, 2014

31

New junctionless RADFET dosimeter design for low-cost radiation monitoring applications

Arar, Djemai, Djeffal, Fayçal, Bentrcia, Toufik, Chahdi, Mohamed

Journal:

Physica status solidi

Year:

2014

Language:

english

File:

PDF, 278 KB

english, 2014

32

Low temperature plasma oxidation for advanced 3D CMOS-based devices

Niess, J., Kegel, W., Lerch, W.

Journal:

Physica status solidi

Year:

2014

Language:

english

File:

PDF, 616 KB

english, 2014

33

Application of atomic layer deposited dopant sources for ultra-shallow doping of silicon

Kalkofen, Bodo, Amusan, Akinwumi A., Lisker, Marco, Burte, Edmund P.

Journal:

Physica status solidi

Year:

2014

Language:

english

File:

PDF, 157 KB

english, 2014

34

NMOS contact resistivity reduction with implants into silicides

Rao, K. V., Khaja, Fareen Adeni, Ni, Chi-Nung, Muthukrishnan, Shankar, Darlak, Andrew, Lei, Jianxin, Brand, Adam, Variam, Naushad

Journal:

Physica status solidi

Year:

2014

Language:

english

File:

PDF, 421 KB

english, 2014

35

Analytical expressions for the drain current of a nanotransistor in the off-state regime

Krahlisch, M., Wulf, U., Kučera, J., Richter, H., Höntschel, J.

Journal:

Physica status solidi

Year:

2014

Language:

english

File:

PDF, 198 KB

english, 2014

36

Impedance spectroscopy of polysilicon in SOI structures

Druzhinin, Anatoly, Ostrovskii, Ihor, Khoverko, Yuriy, Nichkalo, Stepan, Kogut, Iurii

Journal:

Physica status solidi

Year:

2014

Language:

english

File:

PDF, 303 KB

english, 2014

37

More Moore meets More than Moore: Enabling healthcare applications

Brongersma, Sywert H., Blauw, Michiel, Zevenbergen, Marcel, Karabacak, Devrez, Vitushinsky, Roman, Dam, Van Anh, Calama, Mercedes Crego, Vullers, Rudolf, Zeng, Zeng, Schaijk, Rob van

Journal:

Physica status solidi

Year:

2014

Language:

english

File:

PDF, 597 KB

english, 2014

38

Formation energy of intrinsic point defects in nanometer-thick Si and Ge foils and implications for Ge crystal growth from a melt

Kamiyama, Eiji, Sueoka, Koji, Vanhellemont, Jan

Journal:

Physica status solidi

Year:

2014

Language:

english

File:

PDF, 305 KB

english, 2014

39

Resistivity changes of low resistivity Si substrates by rapid thermal processing and subsequent annealing

Zhang, X., Ma, X., Gao, C., Xu, T., Zhao, J., Dong, P., Vanhellemont, J.

Journal:

Physica status solidi

Year:

2014

Language:

english

File:

PDF, 183 KB

english, 2014

40

The effect of Ge content on the formation and evolution of {113} defects in SiGe alloys

Laânab, Larbi, Belafhaili, Amine, Cristiano, Filadelfo, Cherkashin, Nikolay, Claverie, Alain

Journal:

Physica status solidi

Year:

2014

Language:

english

File:

PDF, 326 KB

english, 2014

41

Cover Picture: Phys. Status Solidi C 1/2014

Journal:

Physica status solidi

Year:

2014

File:

PDF, 306 KB

2014

42

Issue Information: Phys. Status Solidi C 1/2014

Journal:

Physica status solidi

Year:

2014

Language:

english

File:

PDF, 341 KB

english, 2014

43

Contents: Phys. Status Solidi C 1/2014

Journal:

Physica status solidi

Year:

2014

Language:

english

File:

PDF, 199 KB

english, 2014

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