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Determination of defect level parameters in semi-insulating GaAs:Cr from transient photocurrent experiment
Belgacem, H, Merazga, A, Longeaud, CVolume:
20
Language:
english
Journal:
Semiconductor Science and Technology
DOI:
10.1088/0268-1242/20/1/009
Date:
January, 2005
File:
PDF, 226 KB
english, 2005