A study on multiple defect states in low-carbon doped GaN...

Thin Solid Films 2014 / 04 Vol. 557

A study on multiple defect states in low-carbon doped GaN layers and its correlation with AlGaN/GaN high electron mobility transistor operation

Tanaka, Takeshi, Shiojima, Kenji, Otoki, Yohei, Tokuda, Yutaka
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Volume:
557
Language:
english
Journal:
Thin Solid Films
DOI:
10.1016/j.tsf.2013.10.077
Date:
April, 2014
File:
PDF, 542 KB
english, 2014
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