Volume 557

Thin Solid Films

Volume 557
9

Reduced-pressure chemical vapor deposition of boron-doped Si and Ge layers

Year:
2014
Language:
english
File:
PDF, 991 KB
english, 2014
30

Preface

Year:
2014
Language:
english
File:
PDF, 379 KB
english, 2014
32

Order and temperature dependence of surface blistering in H and He co-implanted Ge

Year:
2014
Language:
english
File:
PDF, 1020 KB
english, 2014
37

Schottky barrier height systematics studied by partisan interlayer

Year:
2014
Language:
english
File:
PDF, 242 KB
english, 2014
40

HfO2-assisted SiO2 reduction in HfO2/SiO2/Si stacks

Year:
2014
Language:
english
File:
PDF, 925 KB
english, 2014
46

HCl defect revelation in 200mm SiGe virtual substrates: A systematic study

Year:
2014
Language:
english
File:
PDF, 998 KB
english, 2014
61

Study of Ge loss during Ge condensation process

Year:
2014
Language:
english
File:
PDF, 857 KB
english, 2014
69

Sn-induced low-temperature (~150°C) crystallization of Ge on insulator

Year:
2014
Language:
english
File:
PDF, 460 KB
english, 2014
74

Coherent lateral-growth of Ge over insulating film by rapid-melting-crystallization

Year:
2014
Language:
english
File:
PDF, 944 KB
english, 2014
78

Structural transition in Ge growth on Si mediated by sub-monolayer carbon

Year:
2014
Language:
english
File:
PDF, 915 KB
english, 2014