Two-step Electrical Degradation Behavior in α-InGaZnO...

IEEE Electron Device Letters 2013 / 05 Vol. 34; Iss. 5

Two-step Electrical Degradation Behavior in α-InGaZnO Thin-film Transistor Under Gate-bias Stress

Chen, Fa-Hsyang, Pan, Tung-Ming, Chen, Ching-Hung, Liu, Jiang-Hung, Lin, Wu-Hsiung, Chen, Po-Hsueh
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Volume:
34
Language:
english
Journal:
IEEE Electron Device Letters
DOI:
10.1109/led.2013.2248115
Date:
May, 2013
File:
PDF, 697 KB
english, 2013
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