Gate-Bias Stress Stability of P-Type SnO Thin-Film...

IEEE Electron Device Letters 2014 / 01 Vol. 35; Iss. 1

Gate-Bias Stress Stability of P-Type SnO Thin-Film Transistors Fabricated by RF-Sputtering

I-Chung Chiu,, I-Chun Cheng,
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Volume:
35
Language:
english
Journal:
IEEE Electron Device Letters
DOI:
10.1109/led.2013.2291896
Date:
January, 2014
File:
PDF, 803 KB
english, 2014
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