High-Performance InAs-On-Insulator n-MOSFETs With Ni-InGaAs...

IEEE Transactions on Electron Devices 2013 / 10 Vol. 60; Iss. 10

High-Performance InAs-On-Insulator n-MOSFETs With Ni-InGaAs S/D Realized by Contact Resistance Reduction Technology

Kim, SangHyeon, Yokoyama, Masafumi, Nakane, Ryosho, Ichikawa, Osamu, Osada, Takenori, Hata, Masahiko, Takenaka, Mitsuru, Takagi, Shinichi
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Volume:
60
Language:
english
Journal:
IEEE Transactions on Electron Devices
DOI:
10.1109/ted.2013.2279363
Date:
October, 2013
File:
PDF, 2.32 MB
english, 2013
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