Separation of Corner Component in TAT Mechanism in Retention Characteristics of Sub 20-nm NAND Flash Memory
Lee, Kyunghwan, Kang, Myounggon, Seo, Seongjun, Kang, Duckseoung, Li, Dong Hua, Hwang, Yuchul, Shin, HyungcheolVolume:
35
Language:
english
Journal:
IEEE Electron Device Letters
DOI:
10.1109/LED.2013.2288267
Date:
January, 2014
File:
PDF, 789 KB
english, 2014