Computational analysis of breakdown voltage enhancement for...

Solid-State Electronics 2014 / 1 Vol. 91

Computational analysis of breakdown voltage enhancement for AlGaN/GaN HEMTs through optimal pairing of deep level impurity density and contact design

DasGupta, Sandeepan, Baca, Albert G., Cich, Michael J.
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Volume:
91
Language:
english
Journal:
Solid-State Electronics
DOI:
10.1016/j.sse.2013.09.011
Date:
January, 2014
File:
PDF, 2.91 MB
english, 2014
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