Volume 91

Solid-State Electronics

Volume 91

1

High voltage InAlN/GaN HEMTs with nonalloyed Source/Drain for RF power applications

Zhou, Qi, Yang, Shu, Chen, Wanjun, Zhang, Bo, Feng, Zhihong, Cai, Shujun, Chen, Kevin J.

Journal:

Solid-State Electronics

Year:

2014

Language:

english

File:

PDF, 569 KB

english, 2014

2

Avalanche breakdown in SOI MESFETs

Lepkowski, William, Wilk, Seth J., Parsi, Anuradha, Saraniti, Marco, Ferry, David, Thornton, Trevor J.

Journal:

Solid-State Electronics

Year:

2014

Language:

english

File:

PDF, 493 KB

english, 2014

3

Optimized design of Si-cap layer in strained-SiGe channel p-MOSFETs based on computational and experimental approaches

Sato-Iwanaga, Junko, Inoue, Akira, Sorada, Haruyuki, Takagi, Takeshi, Rothschild, Aude, Loo, Roger, Biesemans, Serge, Ito, Choshu, Liu, Yang, Dutton, Robert W., Tsuchiya, Hideaki

Journal:

Solid-State Electronics

Year:

2014

Language:

english

File:

PDF, 1.08 MB

english, 2014

4

A defect-based compact modeling approach for the reliability of CMOS devices and integrated circuits

Esqueda, Ivan S., Barnaby, Hugh J.

Journal:

Solid-State Electronics

Year:

2014

Language:

english

File:

PDF, 1.09 MB

english, 2014

5

Analysis of temperature dependent hysteresis in MoS2 field effect transistors for high frequency applications

Shah, P.B., Amani, M., Chin, M.L., O’Regan, T.P., Crowne, F.J., Dubey, M.

Journal:

Solid-State Electronics

Year:

2014

Language:

english

File:

PDF, 624 KB

english, 2014

6

Cryogenic noise performance of InGaAs/InAlAs HEMTs grown on InP and GaAs substrate

Schleeh, J., Rodilla, H., Wadefalk, N., Nilsson, P.Å., Grahn, J.

Journal:

Solid-State Electronics

Year:

2014

Language:

english

File:

PDF, 631 KB

english, 2014

7

Computational analysis of breakdown voltage enhancement for AlGaN/GaN HEMTs through optimal pairing of deep level impurity density and contact design

DasGupta, Sandeepan, Baca, Albert G., Cich, Michael J.

Journal:

Solid-State Electronics

Year:

2014

Language:

english

File:

PDF, 2.91 MB

english, 2014

8

Performance improvement of oxide thin-film transistors with a two-step-annealing method

Li, Min, Lan, Linfeng, Xu, Miao, Xu, Hua, Luo, Dongxiang, Xiao, Peng, Peng, Junbiao

Journal:

Solid-State Electronics

Year:

2014

Language:

english

File:

PDF, 505 KB

english, 2014

9

Study of charge loss mechanisms for nano-sized localized trapping SONOS memory devices

Xu, Yue, Yue, Heng, Zhao, Fei-Fei

Journal:

Solid-State Electronics

Year:

2014

Language:

english

File:

PDF, 828 KB

english, 2014

10

Advantages of different source/drain engineering on scaled UTBOX FDSOI nMOSFETs at high temperature operation

Nicoletti, Talitha, Santos, Sara Dereste dos, Martino, João Antonio, Aoulaiche, Marc, Veloso, Anabela, Jurczak, Malgorzata, Simoen, Eddy, Claeys, Cor

Journal:

Solid-State Electronics

Year:

2014

Language:

english

File:

PDF, 786 KB

english, 2014

11

Corner induced non-uniform electric field effect on the electrical reliability of metal–oxide–semiconductor devices with non-planar substrates

Tseng, Po-Hao, Hwu, Jenn-Gwo

Journal:

Solid-State Electronics

Year:

2014

Language:

english

File:

PDF, 2.04 MB

english, 2014

12

Proximity gettering of slow diffuser contaminants in CMOS image sensors

Russo, F., Moccia, G., Nardone, G., Alfonsetti, R., Polsinelli, G., D’Angelo, A., Patacchiola, A., Liverani, M., Pianezza, P., Lippa, T., Carlini, M., Polignano, M.L., Mica, I., Cazzini, E., Ceresoli,

Journal:

Solid-State Electronics

Year:

2014

Language:

english

File:

PDF, 2.35 MB

english, 2014

13

Enhanced seebeck coefficient for a compressive n-type polysilicon film

Journal:

Solid-State Electronics

Year:

2014

Language:

english

File:

PDF, 796 KB

english, 2014

14

Automatic TCAD model calibration for multi-cellular Trench-IGBTs

Maresca, Luca, Breglio, Giovanni, Irace, Andrea

Journal:

Solid-State Electronics

Year:

2014

Language:

english

File:

PDF, 1.44 MB

english, 2014

15

Effect of annealing on the electrical properties of insulating aluminum nitride in MIM and MIS structures

Ortiz, Carlos R., Pantojas, Victor M., Otaño-Rivera, Wilfredo

Journal:

Solid-State Electronics

Year:

2014

Language:

english

File:

PDF, 919 KB

english, 2014

16

MASTAR VA: A predictive and flexible compact model for digital performances evaluation of CMOS technology with conventional CAD tools

Lacord, Joris, Ghibaudo, Gérard, Boeuf, Frédéric

Journal:

Solid-State Electronics

Year:

2014

Language:

english

File:

PDF, 2.28 MB

english, 2014

17

Effect of body bias on negative bias temperature instability in pMOSFET with SiON gate dielectrics

Kim, Hyojune, Roh, Yonghan

Journal:

Solid-State Electronics

Year:

2014

Language:

english

File:

PDF, 800 KB

english, 2014

18

Modeling of sheet carrier density and microwave frequency characteristics in Spacer based AlGaN/AlN/GaN HEMT devices

Mohanbabu, A., Anbuselvan, N., Mohankumar, N., Godwinraj, D., Sarkar, C.K.

Journal:

Solid-State Electronics

Year:

2014

Language:

english

File:

PDF, 784 KB

english, 2014

19

Modeling the voltage nonlinearity of high-k MIM capacitors

Kannadassan, D., Karthik, R., Shojaei Baghini, Maryam, Mallick, P.S.

Journal:

Solid-State Electronics

Year:

2014

Language:

english

File:

PDF, 1.49 MB

english, 2014

20

Comparative study of NSB and UTB SOI MOSFETs characteristics by extraction of series resistance

Karsenty, A., Chelly, A.

Journal:

Solid-State Electronics

Year:

2014

Language:

english

File:

PDF, 2.52 MB

english, 2014

21

Experimental study of back gate bias effect and short channel effect in ultra-thin buried oxide tri-gate nanowire MOSFETs

Ota, K., Saitoh, M., Tanaka, C., Numata, T.

Journal:

Solid-State Electronics

Year:

2014

Language:

english

File:

PDF, 713 KB

english, 2014

22

Quantum simulation study of single halo dual-material gate CNTFETs

Wang, Wei, Li, Na, Xia, Chunping, Xiao, Guangran, Ren, Yuzhou, Li, Hao, Zheng, Lifen, Li, Jin, Jiang, Junjie, Chen, Xiaoping, Wang, Kai

Journal:

Solid-State Electronics

Year:

2014

Language:

english

File:

PDF, 865 KB

english, 2014

23

Evaluation of voltage vs. pulse width modulation and feedback during set/reset verify-programming to achieve 10 million cycles for 50nm HfO2 ReRAM

Higuchi, Kazuhide, Takeuchi, Ken, Iwasaki, Tomoko Ogura

Journal:

Solid-State Electronics

Year:

2014

Language:

english

File:

PDF, 2.13 MB

english, 2014

24

Backgating effect in III–V MESFET’s: A physical model

Manifacier, J.C., Ardebili, R.

Journal:

Solid-State Electronics

Year:

2014

Language:

english

File:

PDF, 589 KB

english, 2014

25

Effect of load current density during the production of Cu2O/Cu solar cells by anodic oxidation on film quality and output power

Hasuda, K., Takakuwa, O., Soyama, H.

Journal:

Solid-State Electronics

Year:

2014

Language:

english

File:

PDF, 1.48 MB

english, 2014

26

Editorial Board

Journal:

Solid-State Electronics

Year:

2014

Language:

english

File:

PDF, 62 KB

english, 2014

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