Comparison of the performances of an InAlN/GaN HEMT with a...

Microelectronics Reliability 2013 / 9 Vol. 53; Iss. 9-11

Comparison of the performances of an InAlN/GaN HEMT with a Mo/Au gate or a Ni/Pt/Au gate

Rossetto, I., Rampazzo, F., Silvestri, R., Zanandrea, A., Dua, C., Delage, S., Oualli, M., Meneghini, M., Zanoni, E., Meneghesso, G.
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Volume:
53
Language:
english
Journal:
Microelectronics Reliability
DOI:
10.1016/j.microrel.2013.07.048
Date:
September, 2013
File:
PDF, 684 KB
english, 2013
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