3510-V 390-$\hbox{m}\Omega\cdot\hbox{cm}^{2}$ 4H-SiC...

IEEE Electron Device Letters 2009 / 09 Vol. 30; Iss. 9

3510-V 390-$\hbox{m}\Omega\cdot\hbox{cm}^{2}$ 4H-SiC Lateral JFET on a Semi-Insulating Substrate

Chin-Fang Huang,, Cheng-Li Kan,, Tian-Li Wu,, Meng-Chia Lee,, Yo-Zthu Liu,, Kung-Yen Lee,, Feng Zhao,
How much do you like this book?
What’s the quality of the file?
Download the book for quality assessment
What’s the quality of the downloaded files?
Volume:
30
Language:
english
Journal:
IEEE Electron Device Letters
DOI:
10.1109/LED.2009.2027722
Date:
September, 2009
File:
PDF, 320 KB
english, 2009
Conversion to is in progress
Conversion to is failed