Investigation of Impact Ionization in InAs-Channel HEMT for...

IEEE Electron Device Letters 2007 / 10 Vol. 28; Iss. 10

Investigation of Impact Ionization in InAs-Channel HEMT for High-Speed and Low-Power Applications

Chang, Chia-Yuan, Hsu, Heng-Tung, Chang, Edward Yi, Kuo, Chien-I, Datta, Suman, Radosavljevic, Marko, Miyamoto, Yasuyuki, Huang, Guo-Wei
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Volume:
28
Language:
english
Journal:
IEEE Electron Device Letters
DOI:
10.1109/LED.2007.906083
Date:
October, 2007
File:
PDF, 370 KB
english, 2007
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