Deep level defects in Ga- and N-polarity GaN grown by molecular beam epitaxy on si(111)
Peta, Koteswara Rao, Lee, Sang-Tae, Moon-Deock, Kim, Oh, Jae-Eung, Kim, Song-Gang, Kim, Tae-GeunVolume:
378
Language:
english
Journal:
Journal of Crystal Growth
DOI:
10.1016/j.jcrysgro.2012.12.118
Date:
September, 2013
File:
PDF, 626 KB
english, 2013