Volume 378

Journal of Crystal Growth

Volume 378

1

Enhancement of light emission from Ge quantum dots by photonic crystal nanocavities at room-temperature

Xu, Xuejun, Usami, Noritaka, Maruizumi, Takuya, Shiraki, Yasuhiro

Journal:

Journal of Crystal Growth

Year:

2013

Language:

english

File:

PDF, 3.12 MB

english, 2013

2

Thermal-activated carrier transfer in ZnCdO thin film grown by plasma-assisted molecular beam epitaxy

Chien, K.F., Hsu, W.L., Tzou, A.J., Lin, Y.C., Chou, W.C., Lee, L., Chia, C.H., Yang, C.S.

Journal:

Journal of Crystal Growth

Year:

2013

Language:

english

File:

PDF, 650 KB

english, 2013

3

Study of Sb template for heteroepitaxial growth of GaSb thin film on Si(111)substrate

Toyota, H., Okabe, A., Endoh, T., Jinbo, Y., Uchitomi, N.

Journal:

Journal of Crystal Growth

Year:

2013

Language:

english

File:

PDF, 1.06 MB

english, 2013

4

Size-dependent contact angle of Ga droplets on GaAs

Jo, Masafumi, Mano, Takaaki, Sakuma, Yoshiki, Sakoda, Kazuaki

Journal:

Journal of Crystal Growth

Year:

2013

Language:

english

File:

PDF, 487 KB

english, 2013

5

Self-assembly of Ga droplets attached to GaAs quantum dots

Elborg, Martin, Noda, Takeshi, Mano, Takaaki, Jo, Masafumi, Sakuma, Yoshiki, Sakoda, Kazuaki

Journal:

Journal of Crystal Growth

Year:

2013

Language:

english

File:

PDF, 574 KB

english, 2013

6

Incorporation of Mn atoms into the GaAs(110) surface

Hirayama, Motoi, Tsukamoto, Shiro

Journal:

Journal of Crystal Growth

Year:

2013

Language:

english

File:

PDF, 450 KB

english, 2013

7

Quantitative estimation of density of Bi-induced localized states in GaAs1−xBix grown by molecular beam epitaxy

Yoshimoto, Masahiro, Itoh, Mizuki, Tominaga, Yoriko, Oe, Kunishige

Journal:

Journal of Crystal Growth

Year:

2013

Language:

english

File:

PDF, 1.51 MB

english, 2013

8

High-performance AlGaN/GaN High-electron-mobility transistors employing H2O annealing

Ahn, Woojin, Seok, Ogyun, Song, Seung Min, Han, Min-Koo, Ha, Min-Woo

Journal:

Journal of Crystal Growth

Year:

2013

Language:

english

File:

PDF, 516 KB

english, 2013

9

Dynamics of electron-spin injection in a heterovalent GaAs/AlGaAs/ZnMnSe structure with a coupled double quantum well of GaAs/AlGaAs

Kuno, Y., Sasaki, T., Kiba, T., Kaibyshev, V.Kh., Liaci, F., Toropov, A.A., Ivanov, S.V., Murayama, A.

Journal:

Journal of Crystal Growth

Year:

2013

Language:

english

File:

PDF, 643 KB

english, 2013

10

As flux dependence on RHEED transients during InAs quantum dot growth

Shimomura, K., Shirasaka, T., Tex, D.M., Kamiya, I.

Journal:

Journal of Crystal Growth

Year:

2013

Language:

english

File:

PDF, 425 KB

english, 2013

11

The investigation of GaInP solar cell grown by all-solid MBE

Dai, P., Lu, S.L., Zhu, Y.Q., Ji, L., He, W., Tan, M., Yang, H., Arimochi, M., Yoshida, H., Uchida, S., Ikeda, M.

Journal:

Journal of Crystal Growth

Year:

2013

Language:

english

File:

PDF, 514 KB

english, 2013

12

Mechanism of selective area growth of InP on Si(001) substrates using SiO2 mask by gas-source molecular beam epitaxy

Hasegawa, S., Shimoi, T., Asahi, H.

Journal:

Journal of Crystal Growth

Year:

2013

Language:

english

File:

PDF, 561 KB

english, 2013

13

Photocapacitance study of MBE grown GaInNAsSb thin film solar cells

Islam, Muhammad Monirul, Miyashita, Naoya, Ahsan, Nazmul, Sakurai, Takeaki, Akimoto, Katsuhiro, Okada, Yoshitaka

Journal:

Journal of Crystal Growth

Year:

2013

Language:

english

File:

PDF, 437 KB

english, 2013

14

Effects of growth temperature and buffer scheme on characteristics of InP-based metamorphic InGaAs photodetectors

Gu, Y., Zhang, Y.G., Wang, K., Fang, X., Li, C., Zhou, L., Li, A.Z., Li, Hsby.

Journal:

Journal of Crystal Growth

Year:

2013

Language:

english

File:

PDF, 526 KB

english, 2013

15

All in-situ GaSb MOS structures on GaAs (001): Growth, passivation and high-k oxides

Tokranov, V., Madisetti, S., Yakimov, M., Nagaiah, P., Faleev, N., Oktyabrsky, S.

Journal:

Journal of Crystal Growth

Year:

2013

Language:

english

File:

PDF, 1.21 MB

english, 2013

16

Heterointegration by molecular beam epitaxy: (In,Ga)As/GaAs quantum wells on GaAs, Ge, Ge/Si and Ge/Si pillars

Richter, M., Uccelli, E., Taboada, A.G., Caimi, D., Daix, N., Sousa, M., Marchiori, C., Siegwart, H., Falub, C.V., von Känel, H., Isa, F., Isella, G., Pezous, A., Dommann, A., Niedermann, P., Fompeyri

Journal:

Journal of Crystal Growth

Year:

2013

Language:

english

File:

PDF, 828 KB

english, 2013

17

Growth of heterostructures on InAs for high mobility device applications

Contreras-Guerrero, R., Wang, S., Edirisooriya, M., Priyantha, W., Rojas-Ramirez, J.S., Bhuwalka, K., Doornbos, G., Holland, M., Oxland, R., Vellianitis, G., Van Dal, M., Duriez, B., Passlack, M., Dia

Journal:

Journal of Crystal Growth

Year:

2013

Language:

english

File:

PDF, 656 KB

english, 2013

18

Effects of As pressure on the quality of GaAs/AlGaAs quantum dots grown on silicon by droplet epitaxy

Bietti, S., Cavigli, L., Minari, S., Adorno, S., Isella, G., Vinattieri, A., Gurioli, M., Sanguinetti, S.

Journal:

Journal of Crystal Growth

Year:

2013

Language:

english

File:

PDF, 323 KB

english, 2013

19

Interface properties of MBE grown epitaxial oxides on GaAs

Contreras-Guerrero, R., Edirisooriya, M., Noriega, O.C., Droopad, R.

Journal:

Journal of Crystal Growth

Year:

2013

Language:

english

File:

PDF, 576 KB

english, 2013

20

Graphene films grown at low substrate temperature and the growth model by using MBE technique

Lin, Meng-Yu, Guo, Wei-Ching, Wu, Meng-Hsun, Wang, Pro-Yao, Lee, Si-Chen, Lin, Shih-Yen

Journal:

Journal of Crystal Growth

Year:

2013

Language:

english

File:

PDF, 965 KB

english, 2013

21

Origin of cooperative transition of antisite-Arsenic defects in Be-doped low-temperature-grown GaAs layers

Mohamed, Mohd Ambri, Lam, Pham Tien, Otsuka, N.

Journal:

Journal of Crystal Growth

Year:

2013

Language:

english

File:

PDF, 629 KB

english, 2013

22

Strain relaxation of thin Ge films on Si(001) grown by carbon-mediated epitaxy

Tetzlaff, D., Wietler, T.F., Bugiel, E., Osten, H.J.

Journal:

Journal of Crystal Growth

Year:

2013

Language:

english

File:

PDF, 688 KB

english, 2013

23

Growth of InAs/GaAs quantum dots with central emission wavelength of 1.05μm using In-flush technique for broadband near-infrared light source

Hino, Yuji, Ozaki, Nobuhiko, Ohkouchi, Shunsuke, Ikeda, Naoki, Sugimoto, Yoshimasa

Journal:

Journal of Crystal Growth

Year:

2013

Language:

english

File:

PDF, 683 KB

english, 2013

24

Wideband luminescence of high-density InAs quantum dots on GaAsSb/GaAs layers

Osaka, Yuji, Tanabe, Hiroyuki, Yamada, Kazuhiro, Yamaguchi, Koichi

Journal:

Journal of Crystal Growth

Year:

2013

Language:

english

File:

PDF, 616 KB

english, 2013

25

Molecular beam epitaxial growths of high-optical-gain InAs quantum dots on GaAs for long-wavelength emission

Nishi, K., Kageyama, T., Yamaguchi, M., Maeda, Y., Takemasa, K., Yamamoto, T., Sugawara, M., Arakawa, Y.

Journal:

Journal of Crystal Growth

Year:

2013

Language:

english

File:

PDF, 621 KB

english, 2013

26

GaAs nanopillars by self-assembled droplet etching

Heyn, Ch., Sonnenberg, D., Bartsch, Th., Wetzel, A., Kerbst, J., Hansen, W.

Journal:

Journal of Crystal Growth

Year:

2013

Language:

english

File:

PDF, 1.01 MB

english, 2013

27

Uncooled InGaSb photovoltaic infrared detectors for gas sensing

Katsumata, Takashi, Nishimura, Ryosuke, Yamaoka, Keisuke, Camargo, Edson Gomes, Morishita, Tomohiro, Ueno, Koichiro, Tokuo, Seiichi, Goto, Hiromasa, Kuze, Naohiro

Journal:

Journal of Crystal Growth

Year:

2013

Language:

english

File:

PDF, 678 KB

english, 2013

28

The effects of injector doping densities on lasing properties of InP-based quantum cascade lasers at 4.3μm

Li, Y.Y., Li, A.Z., Gu, Y., Zhang, Y.G., Li, H.S.B.Y., Wang, K., Fang, X.

Journal:

Journal of Crystal Growth

Year:

2013

Language:

english

File:

PDF, 720 KB

english, 2013

29

Optical and electrical properties of ZnSeO alloys grown by plasma-assisted molecular beam epitaxy

Chen, Cheng-Yu, Yang, Cheng-Yu, Chyi, Jen-Inn, Wu, Chih-Hung

Journal:

Journal of Crystal Growth

Year:

2013

Language:

english

File:

PDF, 1014 KB

english, 2013

30

Origin of tensile strain in GaN grown on AlGaN/AlN stress mitigating layers on 100-mm Si (111) by ammonia molecular beam epitaxy

Agrawal, M., Dharmarasu, N., Radhakrishnan, K., Ravikiran, L.

Journal:

Journal of Crystal Growth

Year:

2013

Language:

english

File:

PDF, 975 KB

english, 2013

31

Growth of dilute BGaP alloys by molecular beam epitaxy

Urakami, N., Fukami, F., Sekiguchi, H., Okada, H., Wakahara, A.

Journal:

Journal of Crystal Growth

Year:

2013

Language:

english

File:

PDF, 560 KB

english, 2013

32

Highly strained photovoltaic dual-channel intersubband photodetectors grown by gas-source MBE

Elagin, Mikaela, Schulz, P., Elagin, Mstislav, Semtsiv, M.P., Kirmse, H., Mogilatenko, A., Masselink, W.T.

Journal:

Journal of Crystal Growth

Year:

2013

Language:

english

File:

PDF, 734 KB

english, 2013

33

Growth evolution and magneto-optical characteristics of self-assembled ZnTe/ZnMnSe quantum dots

Lee, Ling, Fan, Wen-Chung, Chien, Kun-Feng, Tzou, An-Jye, Chou, Wu-Ching

Journal:

Journal of Crystal Growth

Year:

2013

Language:

english

File:

PDF, 2.24 MB

english, 2013

34

InP/InGaAs/InP DHBT structures with high carbon-doped base grown by gas source molecular beam epitaxy

Teng, Teng, Xu, Anhuai, Ai, Likun, Sun, Hao, Qi, Ming

Journal:

Journal of Crystal Growth

Year:

2013

Language:

english

File:

PDF, 2.60 MB

english, 2013

35

Surface/interface-related optical properties in Si nanodisks fabricated by neutral-beam etching using bio-templates

Kiba, Takayuki, Suzaki, Kenta, Li, Hao, Igarashi, Makoto, Samukawa, Seiji, Murayama, Akihiro

Journal:

Journal of Crystal Growth

Year:

2013

Language:

english

File:

PDF, 486 KB

english, 2013

36

Long-wavelength electroluminescence of InGaAs-capped type-II GaSb/GaAs quantum-rings at room temperature

Lin, Wei-Hsun, Wang, Kai-Wei, Lin, Shih-Yen, Wu, Meng-Chyi

Journal:

Journal of Crystal Growth

Year:

2013

Language:

english

File:

PDF, 457 KB

english, 2013

37

Spin-injection into epitaxial graphene on silicon carbide

Konishi, Keita, Cui, Zhixin, Hiraki, Takahiro, Yoh, Kanji

Journal:

Journal of Crystal Growth

Year:

2013

Language:

english

File:

PDF, 1.17 MB

english, 2013

38

Crystal growth of magnetic dihydride GdxY1−xH2 for generation of spin current

Sakuraba, T., Hirama, H., Sakai, M., Honda, Z., Hayakawa, M., Okoshi, T., Kitajima, A., Oshima, A., Higuchi, K., Hasegawa, S.

Journal:

Journal of Crystal Growth

Year:

2013

Language:

english

File:

PDF, 495 KB

english, 2013

39

Fabrication and characterization of a δ-dope InAs/InP core shell nanowire transistor

Cui, Zhixin, Ishikura, Tomotsugu, Jabeen, Fauzia, Harmand, J.-C., Yoh, Kanji

Journal:

Journal of Crystal Growth

Year:

2013

Language:

english

File:

PDF, 909 KB

english, 2013

40

Enhancement of hydrogen uptake for Y and Gd films by thin Ni surface overlayers

Hirama, H., Hayakawa, M., Okoshi, T., Sakai, M., Higuchi, K., Kitajima, A., Oshima, A., Hasegawa, S.

Journal:

Journal of Crystal Growth

Year:

2013

Language:

english

File:

PDF, 886 KB

english, 2013

41

Optical and structural studies of highly uniform Ge quantum dots on Si (001) substrate grown by solid-source molecular beam epitaxy

Gotoh, Kazuhiro, Oshima, Ryuji, Sugaya, Takeyoshi, Sakata, Isao, Matsubara, Koji, Kondo, Michio

Journal:

Journal of Crystal Growth

Year:

2013

Language:

english

File:

PDF, 1015 KB

english, 2013

42

Quantitative study of microtwins in GaP/Si thin film and GaAsPN quantum wells grown on silicon substrates

Nguyen Thanh, T., Robert, C., Giudicelli, E., Létoublon, A., Cornet, C., Ponchet, A., Rohel, T., Balocchi, A., Micha, J.S., Perrin, M., Loualiche, S., Marie, X., Bertru, N., Durand, O., Le Corre, A.

Journal:

Journal of Crystal Growth

Year:

2013

Language:

english

File:

PDF, 913 KB

english, 2013

43

Effect of Ag-doped bathocuproine on the recombination properties of exciton in fullerene

Wang, Shenghao, Sakurai, Takeaki, Komatsu, Keiichirou, Akimoto, Katsuhiro

Journal:

Journal of Crystal Growth

Year:

2013

Language:

english

File:

PDF, 364 KB

english, 2013

44

Temperature dependence of photoluminescence for site-controlled InAs/GaAs quantum dot chains

Hakkarainen, T.V., Schramm, A., Luna, E., Tommila, J., Guina, M.

Journal:

Journal of Crystal Growth

Year:

2013

Language:

english

File:

PDF, 583 KB

english, 2013

45

Control of threading dislocation density at the initial growth stage of AlN on c-sapphire in plasma-assisted MBE

Nechaev, D.V., Aseev, P.A., Jmerik, V.N., Brunkov, P.N., Kuznetsova, Y.V., Sitnikova, A.A., Ratnikov, V.V., Ivanov, S.V.

Journal:

Journal of Crystal Growth

Year:

2013

Language:

english

File:

PDF, 882 KB

english, 2013

46

Characterization of Cu(In,Ga)Se2 grown by MBE by two-wavelength excited photoluminescence spectroscopy

Gupta, Amit, Hiraoka, Norimu, Sakurai, Takeaki, Yamada, Akimasa, Ishizuka, Shogo, Niki, Shigeru, Akimoto, Katsuhiro

Journal:

Journal of Crystal Growth

Year:

2013

Language:

english

File:

PDF, 383 KB

english, 2013

47

Deep level defects in Ga- and N-polarity GaN grown by molecular beam epitaxy on si(111)

Peta, Koteswara Rao, Lee, Sang-Tae, Moon-Deock, Kim, Oh, Jae-Eung, Kim, Song-Gang, Kim, Tae-Geun

Journal:

Journal of Crystal Growth

Year:

2013

Language:

english

File:

PDF, 626 KB

english, 2013

48

Correlation between adatom dynamics and electron accumulation at the epitaxial InAs(111)A surface

Kanisawa, Kiyoshi

Journal:

Journal of Crystal Growth

Year:

2013

Language:

english

File:

PDF, 551 KB

english, 2013

49

Growth parameter dependence of structural, electrical and magnetic properties in GaGdN layers grown on GaN(0001)

Sano, S., Hasegawa, S., Mitsuno, Y., Higashi, K., Ishimaru, M., Sakurai, T., Ohta, H., Asahi, H.

Journal:

Journal of Crystal Growth

Year:

2013

Language:

english

File:

PDF, 918 KB

english, 2013

50

Effect of atomic-hydrogen irradiation on reduction of residual carrier concentration in β-FeSi2 films grown on Si substrates by atomic-hydrogen-assisted molecular beam epitaxy

Funase, Y., Suzuno, M., Toko, K., Suemasu, T.

Journal:

Journal of Crystal Growth

Year:

2013

Language:

english

File:

PDF, 590 KB

english, 2013

51

Control of magnetic anisotropy in (Ga,Mn)As with etching depth of specimen boundaries

Hashimoto, Y., Iye, Y., Katsumoto, S.

Journal:

Journal of Crystal Growth

Year:

2013

Language:

english

File:

PDF, 753 KB

english, 2013

52

Performance of gas source MBE grown InAlGaAs photovoltaic detectors tailored to 1.4μm

Zhou, L., Gu, Y., Zhang, Y.G., Wang, K., Fang, X., Cao, Y.Y., Li, A.Z., Li, Hsby.

Journal:

Journal of Crystal Growth

Year:

2013

Language:

english

File:

PDF, 694 KB

english, 2013

53

Crystalline and electrical characteristics of C60 uniformly doped GaAs layers

Nishinaga, Jiro, Horikoshi, Yoshiji

Journal:

Journal of Crystal Growth

Year:

2013

Language:

english

File:

PDF, 1.20 MB

english, 2013

54

In(Ga)As quantum dots on InGaP layers grown by solid-source molecular beam epitaxy

Sugaya, T., Oshima, R., Matsubara, K., Niki, S.

Journal:

Journal of Crystal Growth

Year:

2013

Language:

english

File:

PDF, 3.68 MB

english, 2013

55

InGaN/GaN self-organized quantum dot lasers grown by molecular beam epitaxy

Banerjee, Animesh, Frost, Thomas, Jahangir, Shafat, Stark, Ethan, Bhattacharya, Pallab

Journal:

Journal of Crystal Growth

Year:

2013

Language:

english

File:

PDF, 1.21 MB

english, 2013

56

Co-doping of InxGa1−xAs with silicon and tellurium for improved ultra-low contact resistance

Law, J.J.M., Carter, A.D., Lee, S., Huang, C.-Y., Lu, H., Rodwell, M.J.W., Gossard, A.C.

Journal:

Journal of Crystal Growth

Year:

2013

Language:

english

File:

PDF, 915 KB

english, 2013

57

Electroluminescence of GaNAs/GaAs MQWs p–i–n junctions grown by RF-MBE using modulated nitrogen radical beam source

Ohta, Natsumi, Arimoto, Kohei, Shiraga, Masahiro, Ishii, Kenta, Inada, Masatoshi, Yanai, Shunsuke, Nakai, Yuko, Akiyama, Hidefumi, Mochizuki, Toshimitsu, Takahashi, Toshio, Takahashi, Naoshi, Miyagawa

Journal:

Journal of Crystal Growth

Year:

2013

Language:

english

File:

PDF, 481 KB

english, 2013

58

Comparison of Be-doped GaAs nanowires grown by Au- and Ga-assisted molecular beam epitaxy

Dheeraj, D.L., Munshi, A.M., Christoffersen, O.M., Kim, D.C., Signorello, G., Riel, H., van Helvoort, A.T.J., Weman, H., Fimland, B.O.

Journal:

Journal of Crystal Growth

Year:

2013

Language:

english

File:

PDF, 951 KB

english, 2013

59

Molecular beam epitaxy of ErGaAs alloys on GaAs (001) substrates

Jin, Ri Guo, Yagi, Shuhei, Hijikata, Yasuto, Kuboya, Shigeyuki, Onabe, Kentaro, Katayama, Ryuji, Yaguchi, Hiroyuki

Journal:

Journal of Crystal Growth

Year:

2013

Language:

english

File:

PDF, 536 KB

english, 2013

60

Direct stress measurement of Si(111) 7×7 reconstruction

Asaoka, Hidehito, Yamazaki, Tatsuya, Yokoyama, Yuta, Yamaguchi, Kenji

Journal:

Journal of Crystal Growth

Year:

2013

Language:

english

File:

PDF, 912 KB

english, 2013

61

Contents

Journal:

Journal of Crystal Growth

Year:

2013

Language:

english

File:

PDF, 58 KB

english, 2013

62

Growth of high-quality CuCl thin films by a technique involving electron-beam irradiation

Ichimiya, Masayoshi, Le Quang, Phuong, Ashida, Masaaki, Itoh, Tadashi

Journal:

Journal of Crystal Growth

Year:

2013

Language:

english

File:

PDF, 705 KB

english, 2013

63

Problems in low-temperature grown polycrystalline InAs layers on glass and their relief by inserting GaSbAs buffer layers

Kajikawa, Y., Okuzako, T., Matsui, Y.

Journal:

Journal of Crystal Growth

Year:

2013

Language:

english

File:

PDF, 491 KB

english, 2013

64

InGaAs quantum-dot-in-ring structure by droplet epitaxy

Boonpeng, P., Kiravittaya, S., Thainoi, S., Panyakeow, S., Ratanathammaphan, S.

Journal:

Journal of Crystal Growth

Year:

2013

Language:

english

File:

PDF, 1018 KB

english, 2013

65

Characteristics of CuGaSe2 layers grown on GaAs substrates

Fujita, Miki, Kawaharazuka, Atsushi, Horikoshi, Yoshiji

Journal:

Journal of Crystal Growth

Year:

2013

Language:

english

File:

PDF, 311 KB

english, 2013

66

Extending emission wavelength of InAs/GaAs quantum dots beyond 1.3μm by using quantum dot bi-layer for broadband light source

Ozaki, N., Nakatani, Y., Ohkouchi, S., Ikeda, N., Sugimoto, Y., Asakawa, K., Clarke, E., Hogg, R.A.

Journal:

Journal of Crystal Growth

Year:

2013

Language:

english

File:

PDF, 1.92 MB

english, 2013

67

Thiol-stabilized PbS quantum dots with stable luminescence in the infrared spectral range

Nakashima, Seisuke, Hoshino, Ai, Cai, Junjiang, Mukai, Kohki

Journal:

Journal of Crystal Growth

Year:

2013

Language:

english

File:

PDF, 888 KB

english, 2013

68

Study of the pseudo-(1×1) surface by RHEED and XPS for InGaN/GaN (0001)/Al2O3 heterostructures grown by PA-MBE

Cruz-Hernández, E., Ramirez-Lopez, M., Pérez-Caro, M., Mani-Gonzalez, P.G., Herrera-Gómez, A., Gorbatchev, A. Yu, López-López, M., Méndez-García, V.H.

Journal:

Journal of Crystal Growth

Year:

2013

Language:

english

File:

PDF, 794 KB

english, 2013

69

Planar Hall effect in a single GaMnAs film grown on Si substrate

Won, Jaehyuk, Shin, Jinsik, Lee, Sangyeop, Lee, Hakjoon, Yoo, Taehee, Lee, Sanghoon, Liu, X., Furdyna, J.K.

Journal:

Journal of Crystal Growth

Year:

2013

Language:

english

File:

PDF, 1.08 MB

english, 2013

70

Molecular beam epitaxy of boron doped p-type BaSi2 epitaxial films on Si(111) substrates for thin-film solar cells

Ajmal Khan, M., Hara, Kosuke O., Nakamura, Kotaro, Du, Weijie, Baba, Masakazu, Toh, Katsuaki, Suzuno, Mitsushi, Toko, Kaoru, Usami, Noritaka, Suemasu, Takashi

Journal:

Journal of Crystal Growth

Year:

2013

Language:

english

File:

PDF, 757 KB

english, 2013

71

The Seventeenth International Conference on Molecular Beam Epitaxy, Nara, Japan, September 23–28, 2012

Journal:

Journal of Crystal Growth

Year:

2013

Language:

english

File:

PDF, 97 KB

english, 2013

72

Coalescence of a-plane GaN stripes in low angle incidence microchannel epitaxy by ammonia-based metal-organic molecular beam epitaxy

Naritsuka, S., Lin, C.H., Uchiyama, S., Maruyama, T.

Journal:

Journal of Crystal Growth

Year:

2013

Language:

english

File:

PDF, 1.11 MB

english, 2013

73

On the origin of the uniaxial strain induced in Si/Ge heterostructures with selective ion implantation technique

Sawano, K., Hoshi, Y., Nagakura, S., Arimoto, K., Nakagawa, K., Usami, N., Shiraki, Y.

Journal:

Journal of Crystal Growth

Year:

2013

Language:

english

File:

PDF, 1.03 MB

english, 2013

74

Proposal of BeZnTe/ZnSeTe superlattice quasi-quaternaries on InP substrates for yellow/green light emitting devices

Kobayashi, Toshiki, Nomura, Ichirou, Murakami, Keisuke, Kishino, Katsumi

Journal:

Journal of Crystal Growth

Year:

2013

Language:

english

File:

PDF, 464 KB

english, 2013

75

Microdisk cavity laser with InGaAs quantum dots on AlAs/GaAs distributed Bragg reflector

Hsing, J.Y., Tzeng, T.E., Kuo, M.Y., Lay, T.S., Shih, M.H.

Journal:

Journal of Crystal Growth

Year:

2013

Language:

english

File:

PDF, 3.72 MB

english, 2013

76

Rock-salt Zn1−xMgxO epilayer having high Zn content grown on MgO (100) substrate by plasma-assisted molecular beam epitaxy

Lu, C.-Y.J., Yan, T., Chang, L., Ploog, K.H., Chou, M.M.C., Chiang, C.-M.

Journal:

Journal of Crystal Growth

Year:

2013

Language:

english

File:

PDF, 1.75 MB

english, 2013

77

Ultrafast photocarrier relaxation processes in Er-doped InAs quantum dots embedded in strain-relaxed InGaAs barriers

Kitada, Takahiro, Ueyama, Hyuga, Morita, Ken, Isu, Toshiro

Journal:

Journal of Crystal Growth

Year:

2013

Language:

english

File:

PDF, 487 KB

english, 2013

78

Selective area growth of InAs nanostructures on faceted GaAs microstructures by migration enhancedepitaxy

Zander, M., Nishinaga, J., Horikoshi, Y.

Journal:

Journal of Crystal Growth

Year:

2013

Language:

english

File:

PDF, 1.89 MB

english, 2013

79

Solid phase epitaxy of EuTiO3 thin films on SrTiO3 (100) substrates with different oxygen contents

Shimamoto, K., Hirose, Y., Nakao, S., Fukumura, T., Hasegawa, T.

Journal:

Journal of Crystal Growth

Year:

2013

Language:

english

File:

PDF, 592 KB

english, 2013

80

Correlation of the MBE growth temperature, material quality, and performance of quantum cascade lasers

Monastyrskyi, G., Aleksandrova, A., Elagin, M., Semtsiv, M.P., Masselink, W.T., Bryksa, V.

Journal:

Journal of Crystal Growth

Year:

2013

Language:

english

File:

PDF, 370 KB

english, 2013

81

Change of Si(110) reconstructed structure by Ge nanocluster formation

Yokoyama, Yuta, Yamazaki, Tatsuya, Asaoka, Hidehito

Journal:

Journal of Crystal Growth

Year:

2013

Language:

english

File:

PDF, 1.26 MB

english, 2013

82

In situ three-dimensional X-ray reciprocal-space mapping of GaAs epitaxial films on Si(001)

Takahasi, M., Nakata, Y., Suzuki, H., Ikeda, K., Kozu, M., Hu, W., Ohshita, Y.

Journal:

Journal of Crystal Growth

Year:

2013

Language:

english

File:

PDF, 698 KB

english, 2013

83

Structural properties of ultra-low density nanoholes for the generation of well-separated GaAs quantum dots

Sonnenberg, D., Graf, A., Paulava, V., Hansen, W., Heyn, Ch.

Journal:

Journal of Crystal Growth

Year:

2013

Language:

english

File:

PDF, 2.15 MB

english, 2013

84

Gas-source MBE growth of strain-relaxed Si1−xCx on Si(100) substrates

Arimoto, Keisuke, Sakai, Shoichiro, Furukawa, Hiroshi, Yamanaka, Junji, Nakagawa, Kiyokazu, Usami, Noritaka, Hoshi, Yusuke, Sawano, Kentarou, Shiraki, Yasuhiro

Journal:

Journal of Crystal Growth

Year:

2013

Language:

english

File:

PDF, 3.83 MB

english, 2013

85

Rutherford backscattering studies of strain-relaxed SiGe films grown on Si substrate with compositionally graded buffer layers

Watanabe, Yoshinori, Oshima, Ryuji, Sakata, Isao, Matsubara, Koji, Sakamoto, Isao

Journal:

Journal of Crystal Growth

Year:

2013

Language:

english

File:

PDF, 904 KB

english, 2013

86

Rim formation on non-elongated InAs quantum dots grown by partial cap and annealing process at low temperature

Kumagai, Naoto, Ohkouchi, Shunsuke, Watanabe, Katsuyuki, Iwamoto, Satoshi, Arakawa, Yasuhiko

Journal:

Journal of Crystal Growth

Year:

2013

Language:

english

File:

PDF, 1.25 MB

english, 2013

87

Molecular beam epitaxial growth of graphene using cracked ethylene

Maeda, Fumihiko, Hibino, Hiroki

Journal:

Journal of Crystal Growth

Year:

2013

Language:

english

File:

PDF, 2.94 MB

english, 2013

88

Lattice and grain-boundary diffusions of impurity atoms in BaSi2 epitaxial layers grown by molecular beam epitaxy

Nakamura, K., Toh, K., Baba, M., Ajmal Khan, M., Du, W., Toko, K., Suemasu, T.

Journal:

Journal of Crystal Growth

Year:

2013

Language:

english

File:

PDF, 625 KB

english, 2013

89

Fabrication of InAs nanoscale rings by droplet epitaxy

Noda, T., Jo, M., Mano, T., Kawazu, T., Sakaki, H.

Journal:

Journal of Crystal Growth

Year:

2013

Language:

english

File:

PDF, 890 KB

english, 2013

90

Editorial Board

Journal:

Journal of Crystal Growth

Year:

2013

Language:

english

File:

PDF, 29 KB

english, 2013

91

Multi-source MBE with high-precision rate control system as a synthesis method sui generis for multi-cation metal oxides

Yamamoto, Hideki, Krockenberger, Yoshiharu, Naito, Michio

Journal:

Journal of Crystal Growth

Year:

2013

Language:

english

File:

PDF, 1.70 MB

english, 2013

92

Growth mechanism of CuZnInSe2 thin films grown by molecular beam epitaxy

Tseng, Ya Hsin, Yang, Chu Shou, Wu, Chia Hsing, Chiu, Jai Wei, Yang, Min De, Wu, Chih-Hung

Journal:

Journal of Crystal Growth

Year:

2013

Language:

english

File:

PDF, 1.01 MB

english, 2013

93

Influence of hydrogen incorporation on texture and grain size in YH2 films

Okoshi, T., Hayakawa, M., Hirama, H., Sakai, M., Higuchi, K., Kitajima, A., Oshima, A., Hasegawa, S.

Journal:

Journal of Crystal Growth

Year:

2013

Language:

english

File:

PDF, 404 KB

english, 2013

94

RF-MBE growth of cubic InN nano-scale dots on cubic GaN

Suzuki, Junichiro, Orihara, Misao, Yagi, Shuhei, Hijikata, Yasuto, Yaguchi, Hiroyuki

Journal:

Journal of Crystal Growth

Year:

2013

Language:

english

File:

PDF, 6.37 MB

english, 2013

95

Epitaxial growth of ferromagnetic CoxFe4−xN thin films on SrTiO3 (001) and magneticproperties

Sanai, Tatsunori, Ito, Keita, Toko, Kaoru, Suemasu, Takashi

Journal:

Journal of Crystal Growth

Year:

2013

Language:

english

File:

PDF, 2.12 MB

english, 2013

96

Controlled wurtzite inclusions in self-catalyzed zinc blende III–V semiconductor nanowires

Rieger, Torsten, Lepsa, Mihail Ion, Schäpers, Thomas, Grützmacher, Detlev

Journal:

Journal of Crystal Growth

Year:

2013

Language:

english

File:

PDF, 2.17 MB

english, 2013

97

Photoluminescence properties in GaGdN grown on GaN(0001) by PA-MBE

Higashi, K., Hasegawa, S., Sano, S., Zhou, Y.K., Asahi, H.

Journal:

Journal of Crystal Growth

Year:

2013

Language:

english

File:

PDF, 695 KB

english, 2013

98

Studies of zinc-blende type MnAs thin films grown on InP(001) substrates by XRD

Oomae, H., Irizawa, S., Jinbo, Y., Toyota, H., Kambayashi, T., Uchitomi, N.

Journal:

Journal of Crystal Growth

Year:

2013

Language:

english

File:

PDF, 1.56 MB

english, 2013

99

Fabrication and characterization of DH-α6T monolayer film on silicon dioxide

Ye, Rongbin, Fujinaka, Yusuke, Ohata, Koji, Baba, Mamoru

Journal:

Journal of Crystal Growth

Year:

2013

Language:

english

File:

PDF, 3.63 MB

english, 2013

100

Cubic GaN quantum dots embedded in zinc-blende AlN microdisks

Bürger, M., Kemper, R.M., Bader, C.A., Ruth, M., Declair, S., Meier, C., Förstner, J., As, D.J.

Journal:

Journal of Crystal Growth

Year:

2013

Language:

english

File:

PDF, 542 KB

english, 2013

101

Molecular beam epitaxial growth of ZnCdTeO epilayers for intermediate band solar cells

Tanaka, Tooru, Nagao, Yasuhiro, Mochinaga, Tomohiro, Saito, Katsuhiko, Guo, Qixin, Nishio, Mitsuhiro, Yu, Kin M., Walukiewicz, Wladek

Journal:

Journal of Crystal Growth

Year:

2013

Language:

english

File:

PDF, 587 KB

english, 2013

102

Polarization anisotropy of stacked InAs quantum dots on InGaAs/GaAs cross-hatch patterns

Chokamnuai, T., Rattanadon, P., Thainoi, S., Panyakeow, S., Kanjanachuchai, S.

Journal:

Journal of Crystal Growth

Year:

2013

Language:

english

File:

PDF, 690 KB

english, 2013

103

Growth of cubic GaN on 3C–SiC/Si (001) nanostructures

Kemper, R.M., Hiller, L., Stauden, T., Pezoldt, J., Duschik, K., Niendorf, T., Maier, H.J., Meertens, D., Tillmann, K., As, D.J., Lindner, J.K.N.

Journal:

Journal of Crystal Growth

Year:

2013

Language:

english

File:

PDF, 3.56 MB

english, 2013

104

Temperature-dependent photoluminescence and carrier dynamics of standard and coupled type-II GaSb/GaAs quantum rings

Lin, Wei-Hsun, Wang, Kai-Wei, Lin, Shih-Yen, Wu, Meng-Chyi

Journal:

Journal of Crystal Growth

Year:

2013

Language:

english

File:

PDF, 584 KB

english, 2013

105

Annealing induced anisotropy in GaAs/AlGaAs quantum dots grown by droplet epitaxy

Adorno, S., Bietti, S., Sanguinetti, S.

Journal:

Journal of Crystal Growth

Year:

2013

Language:

english

File:

PDF, 436 KB

english, 2013

106

MBE growth and characterization of a II–VI distributed Bragg reflector and microcavity lattice-matched to MgTe

Rousset, J.-G., Kobak, J., Slupinski, T., Jakubczyk, T., Stawicki, P., Janik, E., Tokarczyk, M., Kowalski, G., Nawrocki, M., Pacuski, W.

Journal:

Journal of Crystal Growth

Year:

2013

Language:

english

File:

PDF, 1.18 MB

english, 2013

107

Infrared emitting property and spherical symmetry of colloidal PbS quantum dots

Nakashima, Seisuke, Kikushima, Kosuke, Mukai, Kohki

Journal:

Journal of Crystal Growth

Year:

2013

Language:

english

File:

PDF, 1.27 MB

english, 2013

108

Preface

Akimoto, Katsuhiro, Suemasu, Takashi, Okumura, Hajime

Journal:

Journal of Crystal Growth

Year:

2013

Language:

english

File:

PDF, 1.29 MB

english, 2013

109

STM observation of MnAs initial growth surface on GaAs(001)-c(4×4)α and 6×6 reconstructions

Hiraoka, Masahiro, Kaku, Shigeru, Yoshino, Junji

Journal:

Journal of Crystal Growth

Year:

2013

Language:

english

File:

PDF, 858 KB

english, 2013

110

Self-organization and photoluminescence properties of Pb0.7Sn0.3Te quantum dots embedded in a CdTe matrix

Koike, Kazuto, Iwamoto, Atsushi, Yano, Mitsuaki

Journal:

Journal of Crystal Growth

Year:

2013

Language:

english

File:

PDF, 1.83 MB

english, 2013

111

Semi-insulating InP:Fe for buried-heterostructure strain-compensated quantum-cascade lasers grown by gas-source molecular-beam epitaxy

Semtsiv, M.P., Aleksandrova, A., Elagin, M., Monastyrskyi, G., Kischkat, J.-F., Flores, Y.V., Masselink, W.T.

Journal:

Journal of Crystal Growth

Year:

2013

Language:

english

File:

PDF, 609 KB

english, 2013

112

Growth of pentacene crystallinity control layers for high mobility organic field-effect transistors based on benzodithiophene-dimer films

Sakai, Tomoya, Matsumoto, Y., Shibamoto, K., Osuga, H., Uno, K., Tanaka, Ichiro

Journal:

Journal of Crystal Growth

Year:

2013

Language:

english

File:

PDF, 2.61 MB

english, 2013

113

Formation of large-grain-sized BaSi2 epitaxial layers grown on Si(111) by molecular beam epitaxy

Baba, M., Toh, K., Toko, K., Hara, K.O., Usami, N., Saito, N., Yoshizawa, N., Suemasu, T.

Journal:

Journal of Crystal Growth

Year:

2013

Language:

english

File:

PDF, 2.69 MB

english, 2013

114

Polarized Raman spectroscopy of corrugated MBE grown GaAs (6̄3̄1̄) homoepitaxial films

Espinosa-Vega, L.I., Rodriguez, A.G., Cruz-Hernandez, E., Martinez-Veliz, I., Rojas-Ramirez, J., Ramirez-Lopez, M., Nieto-Navarro, J., Lopez-Lopez, M., Mendez-Garcia, V.H.

Journal:

Journal of Crystal Growth

Year:

2013

Language:

english

File:

PDF, 1.05 MB

english, 2013

115

Photoluminescence dynamics of excitons at the mini-Brillouin-zone edge in a GaAs/AlAs superlattice

Nakayama, M., Yamashita, T., Hasegawa, T.

Journal:

Journal of Crystal Growth

Year:

2013

Language:

english

File:

PDF, 787 KB

english, 2013

116

Growth of II–VI ZnSe/CdSe nanowires for quantum dot luminescence

Bellet-Amalric, E., Elouneg-Jamroz, M., Rueda-Fonseca, P., Bounouar, S., Hertog, M. Den, Bougerol, C., André, R., Genuist, Y., Poizat, J.P., Kheng, K., Cibert, J., Tatarenko, S.

Journal:

Journal of Crystal Growth

Year:

2013

Language:

english

File:

PDF, 2.32 MB

english, 2013

117

Growth and characterization of GaDyN/GaN double barrierstructures

Sano, M., Zhou, Y.K., Emura, S., Hasegawa, S., Asahi, H.

Journal:

Journal of Crystal Growth

Year:

2013

Language:

english

File:

PDF, 1.23 MB

english, 2013

118

Type-II InAs/GaSb superlattice grown on InP substrate

Miura, K., Iguchi, Y., Kawamura, Y.

Journal:

Journal of Crystal Growth

Year:

2013

Language:

english

File:

PDF, 653 KB

english, 2013

119

Non-VLS growth of GaAs nanowires on silicon by a gallium pre-deposition technique

Kwoen, Jinkwan, Watanabe, Katsuyuki, Iwamoto, Satoshi, Arakawa, Yasuhiko

Journal:

Journal of Crystal Growth

Year:

2013

Language:

english

File:

PDF, 633 KB

english, 2013

120

Large photoresponsivity in semiconducting BaSi2 epitaxial films grown on Si(001) substrates by molecular beam epitaxy

Koike, S., Toh, K., Baba, M., Toko, K., Hara, K.O., Usami, N., Saito, N., Yoshizawa, N., Suemasu, T.

Journal:

Journal of Crystal Growth

Year:

2013

Language:

english

File:

PDF, 948 KB

english, 2013

121

On the structural properties of MgS-rich II–VI-based microcavities

Klembt, Sebastian, Frank, Kristian, Qian, Gang, Klein, Thorsten, Rosenauer, Andreas, Hommel, Detlef, Kruse, Carsten

Journal:

Journal of Crystal Growth

Year:

2013

Language:

english

File:

PDF, 2.72 MB

english, 2013

122

Thickness dependence of magnetic anisotropy in MnSb epitaxial layers

Nishizawa, Nozomi, Munekata, Hiro

Journal:

Journal of Crystal Growth

Year:

2013

Language:

english

File:

PDF, 1.15 MB

english, 2013

123

High-quality SiGe films grown with compositionally graded buffer layers for solar cell applications

Oshima, Ryuji, Watanabe, Yoshinori, Yamanaka, Mitsuyuki, Kawanami, Hitoshi, Sakamoto, Isao, Matsubara, Koji, Sakata, Isao

Journal:

Journal of Crystal Growth

Year:

2013

Language:

english

File:

PDF, 1.41 MB

english, 2013

124

Growth and application of epitaxial heterostructures with polymorphous rare-earth oxides

Dargis, R., Clark, A., Arkun, E., Roucka, R., Smith, R., Demkov, A.A., Lebby, M.

Journal:

Journal of Crystal Growth

Year:

2013

Language:

english

File:

PDF, 359 KB

english, 2013

125

Plasma-assisted molecular beam epitaxy process combined with a liquid phase electroepitaxy, a novel method for the growth of GaN layers

Novikov, S.V., Powell, R.E.L., Kent, A.J., Foxon, C.T.

Journal:

Journal of Crystal Growth

Year:

2013

Language:

english

File:

PDF, 736 KB

english, 2013

126

Suppression of Andreev current due to transverse current flow in an InAs two-dimensional electrons

Takahashi, Y., Hashimoto, Y., Iye, Y., Katsumoto, S.

Journal:

Journal of Crystal Growth

Year:

2013

Language:

english

File:

PDF, 786 KB

english, 2013

127

Coexistence of magnetic domains with in-plane and out-of-plane anisotropy in a single GaMnAs film

Lee, Sangyeop, Lee, Hakjoon, Yoo, Taehee, Lee, Sanghoon, Liu, X., Furdyna, J.K.

Journal:

Journal of Crystal Growth

Year:

2013

Language:

english

File:

PDF, 906 KB

english, 2013

128

Determination of surface electric potential by photoreflectance spectroscopy of HEMT heterostructures

Zamora-Peredo, L., Cortes-Mestizo, I.E., García-González, L., Hernández-Torres, J., Vázquez-Cortes, D., Shimomura, S., Rosa, A. Cisneros-de la, Méndez-García, V.H.

Journal:

Journal of Crystal Growth

Year:

2013

Language:

english

File:

PDF, 740 KB

english, 2013

129

Epitaxial growth of nonpolar ZnO on MgO (100) substrate by molecular beam epitaxy

Lu, C.-Y.J., Chang, L., Ploog, K.H., Chou, M.M.C.

Journal:

Journal of Crystal Growth

Year:

2013

Language:

english

File:

PDF, 1.72 MB

english, 2013

130

Electronic and transport properties of Eu-substituted infinite-layer strontium ferrite thin films

Chikamatsu, Akira, Matsuyama, Toshiya, Katayama, Tsukasa, Hirose, Yasushi, Kumigashira, Hiroshi, Oshima, Masaharu, Fukumura, Tomoteru, Hasegawa, Tetsuya

Journal:

Journal of Crystal Growth

Year:

2013

Language:

english

File:

PDF, 932 KB

english, 2013

131

InGaP solar cells fabricated using solid-source molecular beam epitaxy

Sugaya, T., Takeda, A., Oshima, R., Matsubara, K., Niki, S., Okano, Y.

Journal:

Journal of Crystal Growth

Year:

2013

Language:

english

File:

PDF, 441 KB

english, 2013

132

Broadband InGaAs quantum dot-in-a-well solar cells of p-type wells

Tzeng, T.E., Chuang, K.Y., Lay, T.S., Chang, C.H.

Journal:

Journal of Crystal Growth

Year:

2013

Language:

english

File:

PDF, 1.43 MB

english, 2013

133

Ultra low density of CdTe quantum dots grown by MBE

Kobak, J., Rousset, J.-G., Rudniewski, R., Janik, E., Slupinski, T., Kossacki, P., Golnik, A., Pacuski, W.

Journal:

Journal of Crystal Growth

Year:

2013

Language:

english

File:

PDF, 889 KB

english, 2013

134

InAs/GaSb type-II superlattice mid-wavelength infrared focal plane array detectors grown by molecular beam epitaxy

Chen, Jianxin, Zhou, Yi, Xu, Zhicheng, Xu, Jiajia, Xu, Qingqing, Chen, Honglei, He, Li

Journal:

Journal of Crystal Growth

Year:

2013

Language:

english

File:

PDF, 648 KB

english, 2013

135

MBE grown Ga2O3 and its power device applications

Sasaki, Kohei, Higashiwaki, Masataka, Kuramata, Akito, Masui, Takekazu, Yamakoshi, Shigenobu

Journal:

Journal of Crystal Growth

Year:

2013

Language:

english

File:

PDF, 872 KB

english, 2013

136

Growth of metamorphic InGaP layers on GaAs substrates

Yan, J.Y., Gong, Q., Yue, L., Liu, Q.B., Cheng, R.H., Cao, C.F., Wang, Y., Wang, S.M.

Journal:

Journal of Crystal Growth

Year:

2013

Language:

english

File:

PDF, 741 KB

english, 2013

137

The study of self-assembled ZnO nanorods grown on Si(111) by plasma-assisted molecular beam epitaxy

Tzou, A.J., Chien, K.F., Lai, H.Y., Ku, J.T., Lee, L., Fan, W.C., Chou, W.C.

Journal:

Journal of Crystal Growth

Year:

2013

Language:

english

File:

PDF, 2.27 MB

english, 2013

138

Effects of different substrate surface modifications on the epitaxial ZnO/Si

Wang, Peng, Jin, Changlian, Zhan, Huahan, Chen, Xiaohang, Xu, Fuchun, Zhou, Yinghui, Wang, Huiqiong, Kang, Junyong

Journal:

Journal of Crystal Growth

Year:

2013

Language:

english

File:

PDF, 1.60 MB

english, 2013

139

Observation of optical anisotropy of highly uniform InAs quantum dots

Uemura, M., Ohta, J., Yamaguchi, R., Yamaguchi, K., Tackeuchi, A.

Journal:

Journal of Crystal Growth

Year:

2013

Language:

english

File:

PDF, 377 KB

english, 2013

140

Phase coherent transport in GaAs/AlGaAs core–shellnanowires

Lucot, Damien, Jabeen, Fauzia, Ramdani, Mohammed R., Patriarche, Gilles, Faini, Giancarlo, Mailly, Dominique, Harmand, Jean-Christophe

Journal:

Journal of Crystal Growth

Year:

2013

Language:

english

File:

PDF, 742 KB

english, 2013

141

Growth condition dependence of Ge-doped β-FeSi2 epitaxial film by molecular beam epitaxy

Noda, Keiichi, Terai, Yoshikazu, Fujiwara, Yasufumi

Journal:

Journal of Crystal Growth

Year:

2013

Language:

english

File:

PDF, 1.66 MB

english, 2013

142

RF-MBE growth of cubic AlN on MgO (001) substrates via 2-step c-GaN buffer layer

Kakuda, M., Morikawa, S., Kuboya, S., Katayama, R., Yaguchi, H., Onabe, K.

Journal:

Journal of Crystal Growth

Year:

2013

Language:

english

File:

PDF, 985 KB

english, 2013

143

Shape evolution of low density InAs quantum dots in the partial capping process by using As2 source

Ohkouchi, Shunsuke, Kumagai, Naoto, Watanabe, Katsuyuki, Iwamoto, Satoshi, Arakawa, Yasuhiko

Journal:

Journal of Crystal Growth

Year:

2013

Language:

english

File:

PDF, 1.42 MB

english, 2013

144

Growth of high-density 1.06-μm InGaAs/GaAs quantum dots for high gain lasers by molecular beamepitaxy

Watanabe, Katsuyuki, Akiyama, Tomoyuki, Yokoyama, Yoshitaka, Takemasa, Keizo, Nishi, Kenichi, Tanaka, Yu, Sugawara, Mitsuru, Arakawa, Yasuhiko

Journal:

Journal of Crystal Growth

Year:

2013

Language:

english

File:

PDF, 1.11 MB

english, 2013

145

MBE growth and characterization of (100) and (631)-oriented modulation doped AlGaAs/GaAs heterostructures

Mendez-Garcia, V.H., González-Fernández, J.V., Espinosa-Vega, L.I., Díaz, T., Romano, R., Rosendo, E., Gallardo, S., Vázquez-Cortes, D., Shimomura, S.

Journal:

Journal of Crystal Growth

Year:

2013

Language:

english

File:

PDF, 742 KB

english, 2013

146

Ab initio-based approach to novel behavior of InAs wetting layer surface grown on GaAs(001)

Ito, Tomonori, Hirai, Kentaro, Akiyama, Toru, Nakamura, Kohji

Journal:

Journal of Crystal Growth

Year:

2013

Language:

english

File:

PDF, 1.40 MB

english, 2013

147

Sb irradiation effect on growth of GaAs thin film on Si (111) substrate

Morohara, Osamu, Geka, Hirotaka, Moriyasu, Yoshitaka, Kuze, Naohiro

Journal:

Journal of Crystal Growth

Year:

2013

Language:

english

File:

PDF, 1.42 MB

english, 2013

148

InP1−xAsx quantum dots in InP nanowires: A route for single photon emitters

Harmand, Jean-Christophe, Jabeen, Fauzia, Liu, Linsheng, Patriarche, Gilles, Gauthron, Karine, Senellart, Pascale, Elvira, David, Beveratos, Alexios

Journal:

Journal of Crystal Growth

Year:

2013

Language:

english

File:

PDF, 1.72 MB

english, 2013

149

Molecular beam epitaxy growth of InSb1−xBix thin films

Song, Yuxin, Wang, Shumin, Saha Roy, Ivy, Shi, Peixiong, Hallen, Anders, Lai, Zonghe

Journal:

Journal of Crystal Growth

Year:

2013

Language:

english

File:

PDF, 1.84 MB

english, 2013

150

Growth of GaSb quantum dots on GaAs (311)A

Kawazu, Takuya, Noda, Takeshi, Mano, Takaaki, Sakuma, Yoshiki, Sakaki, Hiroyuki

Journal:

Journal of Crystal Growth

Year:

2013

Language:

english

File:

PDF, 1.50 MB

english, 2013

151

In situ STM observations of step structures in a trench around an InAs QD at 300°C

Toujyou, T., Otsu, T., Wakamatsu, D., Kurisaka, M., Konishi, T., Tsukamoto, S.

Journal:

Journal of Crystal Growth

Year:

2013

Language:

english

File:

PDF, 2.01 MB

english, 2013

152

MBE fabrication of III-N-based laser diodes and its development to industrial system

Skierbiszewski, C., Siekacz, M., Turski, H., Muziol, G., Sawicka, M., Perlin, P., Wasilewski, Z.R., Porowski, S.

Journal:

Journal of Crystal Growth

Year:

2013

Language:

english

File:

PDF, 1.97 MB

english, 2013

153

Ab initio-based approach to initial incorporation of Bi on |GaAs(001)-c(4×4)α surface

Murase, Isao, Akiyama, Toru, Nakamura, Kohji, Ito, Tomonori

Journal:

Journal of Crystal Growth

Year:

2013

Language:

english

File:

PDF, 1.46 MB

english, 2013

154

A calibration method for group V fluxes and impact of V/III flux ratio on the growth of InAs/InAsSb type-II superlattices by molecular beam epitaxy

Li, Hua, Liu, Shi, Cellek, Oray O., Ding, Ding, Shen, Xiao-Meng, Steenbergen, Elizabeth H., Fan, Jin, Lin, Zhiyuan, He, Zhao-Yu, Zhang, Qiang, Webster, Preston T., Johnson, Shane R., Ouyang, Lu, Smith

Journal:

Journal of Crystal Growth

Year:

2013

Language:

english

File:

PDF, 812 KB

english, 2013

155

InGaAs/AlAs/InAlAs coupled double quantum wells for intersubband transition devices operating at 1550nm

Gozu, Shin-ichiro, Mozume, Teruo, Kuwatsuka, Haruhiko, Ishikawa, Hiroshi

Journal:

Journal of Crystal Growth

Year:

2013

Language:

english

File:

PDF, 522 KB

english, 2013

156

Ab initio-based approach to incorporation of N atoms on GaAs(001) surfaces

Sugitani, Tatsuhiko, Akiyama, Toru, Nakamura, Kohji, Ito, Tomonori

Journal:

Journal of Crystal Growth

Year:

2013

Language:

english

File:

PDF, 1.29 MB

english, 2013

157

Optical properties of InAsSbN single quantum wells grown on InP substrates for 2-μm-wavelength region

Shono, Takuya, Mizuta, Shogo, Kawamura, Yuichi

Journal:

Journal of Crystal Growth

Year:

2013

Language:

english

File:

PDF, 410 KB

english, 2013

158

Optical properties of Zn1−xMnxO thin films grown by molecular beam epitaxy

Chien, K.F., Yang, Y.L., Tzou, A.J., Chou, W.C.

Journal:

Journal of Crystal Growth

Year:

2013

Language:

english

File:

PDF, 773 KB

english, 2013

159

Fabrication of low-density self-assembled InAs quantum dots on InP(311)B substrate by molecular beam epitaxy

Akahane, Kouichi, Yamamoto, Naokatsu

Journal:

Journal of Crystal Growth

Year:

2013

Language:

english

File:

PDF, 295 KB

english, 2013

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