An investigation of the time dependence of current degradation in MOS devices : R. Rakkhit, M. C. Peckerar and C. T. Yao. 27th a. Proc. IEEE/IRPS Int. Reliab. Phys. Symp., 103 (1989)
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Volume:
30
Year:
1990
Language:
english
Pages:
2
DOI:
10.1016/0026-2714(90)90444-r
File:
PDF, 118 KB
Your tags:
english, 1990
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