Study of bandgap narrowing in the space-charge region of heavily doped silicon MOS capacitors : H. C. Chen, Sheng S. Li and K. W. Teng. Solid-St. Electron. 32(5), 339 (1989)
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Volume:
30
Year:
1990
Language:
english
Pages:
2
DOI:
10.1016/0026-2714(90)90526-s
File:
PDF, 260 KB
Your tags:
english, 1990
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