Voltage shifts of Fowler-Nordheim tunneling J-V plots in thin gate oxide MOS structures due to trapped charges : S. J. Oh and Y. T. Yeow. Solid-St. Electron. 32(6), 507 (1989)
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Volume:
30
Year:
1990
Language:
english
DOI:
10.1016/0026-2714(90)90528-u
File:
PDF, 132 KB
Your tags:
english, 1990
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