Photoluminescence of the residual shallow acceptor in Inx Ga1 − x grown on GaAs (001) by molecular beam epitaxy: Zhong-Ying Xu, Ji Zong Xu, T. G. Andersson and Zong-Gui Chen. Solid-St. Commun. 70(5), 505 (1989)
Volume:
30
Year:
1990
Language:
english
DOI:
10.1016/0026-2714(90)90529-v
File:
PDF, 132 KB
english, 1990