Optically Activated 4H-SiC p-i-n Diodes for High-Power...

IEEE Electron Device Letters 2009 / 11 Vol. 30; Iss. 11

Optically Activated 4H-SiC p-i-n Diodes for High-Power Applications

Feng Zhao,, Islam, M.M., Muzykov, P., Bolotnikov, A., Sudarshan, T.S.
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Volume:
30
Language:
english
Journal:
IEEE Electron Device Letters
DOI:
10.1109/LED.2009.2031419
Date:
November, 2009
File:
PDF, 349 KB
english, 2009
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