Improvement of photoluminescence from Ge layer with...

Thin Solid Films 2014 / 04 Vol. 557

Improvement of photoluminescence from Ge layer with patterned Si3N4 stressors

Oda, Katsuya, Okumura, Tadashi, Tani, Kazuki, Saito, Shin-ichi, Ido, Tatemi
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Volume:
557
Language:
english
Journal:
Thin Solid Films
DOI:
10.1016/j.tsf.2013.08.117
Date:
April, 2014
File:
PDF, 1.24 MB
english, 2014
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