Impact of the substrate and of the nucleation layer on the properties of AlGaN/GaN HEMTs on SiC
Gamarra, P., Lacam, C., Tordjman, M., di Forte-Poisson, M.-A.Volume:
370
Language:
english
Journal:
Journal of Crystal Growth
DOI:
10.1016/j.jcrysgro.2012.10.001
Date:
May, 2013
File:
PDF, 974 KB
english, 2013