Reverse-bias stress of high electron mobility transistors:...

Microelectronics Reliability 2013 / 9 Vol. 53; Iss. 9-11

Reverse-bias stress of high electron mobility transistors: Correlation between leakage current, current collapse and trap characteristics

Rossetto, I., Meneghini, M., Meneghesso, G., Zanoni, E.
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Volume:
53
Language:
english
Journal:
Microelectronics Reliability
DOI:
10.1016/j.microrel.2013.07.115
Date:
September, 2013
File:
PDF, 1.75 MB
english, 2013
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