Effect of SiO2 tunnel layer processes on the characteristics of MONOS charge trap devices with poly-Si channels
Na, Heedo, Oh, Jinho, Lee, Kyumin, Kim, Jonggi, Lee, Sunghoon, Lim, Dong Hyeok, Cho, Mann-Ho, Sohn, HyunchulVolume:
110
Language:
english
Journal:
Microelectronic Engineering
DOI:
10.1016/j.mee.2013.04.025
Date:
October, 2013
File:
PDF, 2.01 MB
english, 2013