Co-doping of InxGa1−xAs with silicon and tellurium for...

Journal of Crystal Growth 2013 / 9 Vol. 378

Co-doping of InxGa1−xAs with silicon and tellurium for improved ultra-low contact resistance

Law, J.J.M., Carter, A.D., Lee, S., Huang, C.-Y., Lu, H., Rodwell, M.J.W., Gossard, A.C.
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Volume:
378
Language:
english
Journal:
Journal of Crystal Growth
DOI:
10.1016/j.jcrysgro.2012.12.122
Date:
September, 2013
File:
PDF, 915 KB
english, 2013
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