Fabrication of bonded GeOI substrates with thin Al2O3/SiO2...

Solid-State Electronics 2013 / 5 Vol. 83

Fabrication of bonded GeOI substrates with thin Al2O3/SiO2 buried oxide layers

Moriyama, Yoshihiko, Ikeda, Keiji, Kamimuta, Yuuichi, Oda, Minoru, Irisawa, Toshifumi, Nakamura, Yoshiaki, Sakai, Akira, Tezuka, Tsutomu
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Volume:
83
Language:
english
Journal:
Solid-State Electronics
DOI:
10.1016/j.sse.2013.01.036
Date:
May, 2013
File:
PDF, 906 KB
english, 2013
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