Volume 83

Solid-State Electronics

Volume 83

1

The SiGeSn approach towards Si-based lasers

Sun, G., Yu, S.-Q.

Journal:

Solid-State Electronics

Year:

2013

Language:

english

File:

PDF, 1.01 MB

english, 2013

2

Charge carrier traffic at self-assembled Ge quantum dots on Si

Kaniewska, M., Engström, O., Karmous, A., Oehme, M., Petersson, G., Kasper, E.

Journal:

Solid-State Electronics

Year:

2013

Language:

english

File:

PDF, 1.71 MB

english, 2013

3

Terahertz imaging using strained-Si MODFETs as sensors

Meziani, Y.M., Garcìa-Garcìa, E., Velázquez-Pérez, J.E., Coquillat, D., Dyakonova, N., Knap, W., Grigelionis, I., Fobelets, K.

Journal:

Solid-State Electronics

Year:

2013

Language:

english

File:

PDF, 781 KB

english, 2013

4

Analysis of trap-assisted tunneling in vertical Si homo-junction and SiGe hetero-junction Tunnel-FETs

Vandooren, A., Leonelli, D., Rooyackers, R., Hikavyy, A., Devriendt, K., Demand, M., Loo, R., Groeseneken, G., Huyghebaert, C.

Journal:

Solid-State Electronics

Year:

2013

Language:

english

File:

PDF, 1.16 MB

english, 2013

5

Strained germanium–tin (GeSn) p-channel metal-oxide-semiconductor field-effect-transistors (p-MOSFETs) with ammonium sulfide passivation

Wang, Lanxiang, Su, Shaojian, Wang, Wei, Gong, Xiao, Yang, Yue, Guo, Pengfei, Zhang, Guangze, Xue, Chunlai, Cheng, Buwen, Han, Genquan, Yeo, Yee-Chia

Journal:

Solid-State Electronics

Year:

2013

Language:

english

File:

PDF, 775 KB

english, 2013

6

n-Si–p-Si1−xGex nanowire arrays for thermoelectric power generation

Xu, Bin, Li, Chuanbo, Myronov, Maksym, Fobelets, Kristel

Journal:

Solid-State Electronics

Year:

2013

Language:

english

File:

PDF, 745 KB

english, 2013

7

Room-temperature electroluminescence from tensile strained double-heterojunction Germanium pin LEDs on Silicon substrates

Kaschel, Mathias, Schmid, Marc, Gollhofer, Martin, Werner, Jens, Oehme, Michael, Schulze, Jörg

Journal:

Solid-State Electronics

Year:

2013

Language:

english

File:

PDF, 850 KB

english, 2013

8

Low temperature RPCVD epitaxial growth of Si1−xGex using Si2H6 and Ge2H6

Wirths, S., Buca, D., Tiedemann, A.T., Bernardy, P., Holländer, B., Stoica, T., Mussler, G., Breuer, U., Mantl, S.

Journal:

Solid-State Electronics

Year:

2013

Language:

english

File:

PDF, 1.27 MB

english, 2013

9

Fabrication of bonded GeOI substrates with thin Al2O3/SiO2 buried oxide layers

Moriyama, Yoshihiko, Ikeda, Keiji, Kamimuta, Yuuichi, Oda, Minoru, Irisawa, Toshifumi, Nakamura, Yoshiaki, Sakai, Akira, Tezuka, Tsutomu

Journal:

Solid-State Electronics

Year:

2013

Language:

english

File:

PDF, 906 KB

english, 2013

10

Development of epitaxial growth technology for Ge1−xSnx alloy and study of its properties for Ge nanoelectronics

Nakatsuka, Osamu, Shimura, Yosuke, Takeuchi, Wakana, Taoka, Noriyuki, Zaima, Shigeaki

Journal:

Solid-State Electronics

Year:

2013

Language:

english

File:

PDF, 785 KB

english, 2013

11

Effect of gate metal on chemical bonding state in metal/Pr-oxide/Ge gate stack structure

Kato, Kimihiko, Sakashita, Mitsuo, Takeuchi, Wakana, Taoka, Noriyuki, Nakatsuka, Osamu, Zaima, Shigeaki

Journal:

Solid-State Electronics

Year:

2013

Language:

english

File:

PDF, 457 KB

english, 2013

12

Editorial

King Liu, Tsu-Jae, Koester, Steven J., Hartmann, Jean-Michel, Loo, Roger, Yeo, Yee-Chia, Carroll, Malcolm

Journal:

Solid-State Electronics

Year:

2013

Language:

english

File:

PDF, 115 KB

english, 2013

13

Phosphorus atomic layer doping in Ge using RPCVD

Yamamoto, Yuji, Kurps, Rainer, Mai, Christian, Costina, Ioan, Murota, Junichi, Tillack, Bernd

Journal:

Solid-State Electronics

Year:

2013

Language:

english

File:

PDF, 357 KB

english, 2013

14

Ge quantum well optoelectronic devices for light modulation, detection, and emission

Chaisakul, P., Marris-Morini, D., Isella, G., Chrastina, D., Rouifed, M.-S., Frigerio, J., Vivien, L.

Journal:

Solid-State Electronics

Year:

2013

Language:

english

File:

PDF, 1.41 MB

english, 2013

15

Epitaxial growth and anisotropic strain relaxation of Ge1−xSnx layers on Ge(110) substrates

Asano, Takanori, Shimura, Yosuke, Taoka, Noriyuki, Nakatsuka, Osamu, Zaima, Shigeaki

Journal:

Solid-State Electronics

Year:

2013

Language:

english

File:

PDF, 1.06 MB

english, 2013

16

Mushroom-free selective epitaxial growth of Si, SiGe and SiGe:B raised sources and drains

Hartmann, J.M., Benevent, V., Barnes, J.P., Veillerot, M., Lafond, D., Damlencourt, J.F., Morvan, S., Prévitali, B., Andrieu, F., Loubet, N., Dutartre, D.

Journal:

Solid-State Electronics

Year:

2013

Language:

english

File:

PDF, 1.96 MB

english, 2013

17

Morphology evolution of epitaxial SiGe and Si in patterns

Seiss, Birgit, Dutartre, Didier

Journal:

Solid-State Electronics

Year:

2013

Language:

english

File:

PDF, 1.24 MB

english, 2013

18

Band-edge electronic structures, and pre-existing defects in remote plasma deposited (RPD) non-crystalline (nc-) SiO2 and GeO2

Lucovsky, Gerald

Journal:

Solid-State Electronics

Year:

2013

Language:

english

File:

PDF, 871 KB

english, 2013

19

Characterization of anisotropic strain relaxation after isolation for strained SGOI and SiGe/Si structure with newly developed high-NA and oil-immersion Raman method

Usuda, Koji, Tezuka, Tsutomu, Kosemura, Daisuke, Tomita, Motohiro, Ogura, Atsushi

Journal:

Solid-State Electronics

Year:

2013

Language:

english

File:

PDF, 728 KB

english, 2013

20

Strain engineering of ultra-thin silicon-on-insulator structures using through-buried-oxide ion implantation and crystallization

Ding, Yinjie, Cheng, Ran, Zhou, Qian, Du, Anyan, Daval, Nicolas, Nguyen, Bich-Yen, Yeo, Yee-Chia

Journal:

Solid-State Electronics

Year:

2013

Language:

english

File:

PDF, 1.32 MB

english, 2013

21

Editorial Board

Journal:

Solid-State Electronics

Year:

2013

Language:

english

File:

PDF, 63 KB

english, 2013

22

Analysis of USJ formation with combined RTA/laser annealing conditions for 28nm high-k/metal gate CMOS technology using advanced TCAD for process and device simulation

Bazizi, E.M., Zaka, A., Benistant, F.

Journal:

Solid-State Electronics

Year:

2013

Language:

english

File:

PDF, 1.81 MB

english, 2013