Advantages of different source/drain engineering on scaled...

Solid-State Electronics 2014 / 1 Vol. 91

Advantages of different source/drain engineering on scaled UTBOX FDSOI nMOSFETs at high temperature operation

Nicoletti, Talitha, Santos, Sara Dereste dos, Martino, João Antonio, Aoulaiche, Marc, Veloso, Anabela, Jurczak, Malgorzata, Simoen, Eddy, Claeys, Cor
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Volume:
91
Language:
english
Journal:
Solid-State Electronics
DOI:
10.1016/j.sse.2013.09.012
Date:
January, 2014
File:
PDF, 786 KB
english, 2014
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